米6体育平台手机版

ZHCS820E February 2012 – September 2023 TPD1E10B09

PRODUCTION DATA

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITION	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	Pin 1 to 2 or pin 2 to 1			9	V
I_LEAK	Leakage current	Pin 1 = 5 V, pin 2 = 0 V			100	nA
VClamp1,2	Clamp voltage with ESD strike on pin 1, pin 2 grounded.	I_PP = 1 A, tp = 8/20 μSec⁽²⁾			13	V
VClamp1,2	Clamp voltage with ESD strike on pin 1, pin 2 grounded.	I_PP = 5 A, tp = 8/20 μSec⁽²⁾			17	V
VClamp2,1	Clamp voltage with ESD strike on pin 2, pin 1 grounded.	I_PP = 1 A, tp = 8/20 μSec⁽²⁾			13	V
VClamp2,1	Clamp voltage with ESD strike on pin 2, pin 1 grounded.	I_PP = 4.5 A, tp = 8/20 μSec⁽²⁾			20	V
R_DYN	Dynamic resistance	Pin 1 to pin 2⁽¹⁾		0.5		Ω
R_DYN	Dynamic resistance	Pin 2 to pin 1⁽¹⁾		0.5		Ω
C_IO	I/O capacitance	V_IO = 2.5 V; f = 1 MHz		10		pF
V_BR1,2	Break-down voltage, pin 1 to pin 2	I_IO = 1 mA	9.5			V
V_BR2,1	Break-down voltage, pin 2 to pin 1	I_IO = 1 mA	9.5			V

(1) Extraction of R_DYN using least squares fit of TLP characteristics from I_PP = 10 A to I_PP = 20 A.

(2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.