ZHCSF88A May 2016 – July 2016 TPD1E1B04
PRODUCTION DATA.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Electrical fast transient | IEC 61000-4-4 (5/50 ns) | 80 | A | |
| Peak pulse | IEC 61000-4-5 Power (tp - 8/20 µs) | 50 | W | |
| IEC 61000-4-5 Current (tp - 8/20 µs) | 6.3 | A | ||
| TA | Operating free-air temperature | –40 | 125 | °C |
| Tstg | Storage temperature | –65 | 155 | °C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings—IEC Specification
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±30000 | V |
| IEC 61000-4-2 air-gap discharge | ±30000 | |||
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIO | Input pin voltage | –3.6 | 3.6 | V |
| TA | Operating free-air temperature | –40 | 125 | °C |
6.5 Thermal Information
| THERMAL METRIC(1) | TPD1E1B04 | UNIT | |
|---|---|---|---|
| DPY (X1SON) | |||
| 2 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 420 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 169.3 | °C/W |
| RθJB | Junction-to-board thermal resistance | 276.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 122.1 | °C/W |
| ψJB | Junction-to-board characterization parameter | 157.3 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 100 nA | –3.6 | 3.6 | V | |
| VBRF | Breakdown voltage, any IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.4 | V | ||
| VBRR | Breakdown voltage, GND to any IO pin | Measured as the maximum voltage before device snaps back into VHOLD voltage | –6.4 | V | ||
| VHOLD | Holding voltage | IIO = 1 mA, TA = 25°C | 5 | 6 | 6.6 | V |
| VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 6.3 | V | ||
| IPP = 5 A, TLP, from IO to GND | 6.8 | |||||
| IPP = 16 A, TLP, from IO to GND | 8.5 | |||||
| IPP = 1 A, TLP, from GND to IO | 6.3 | |||||
| IPP = 5 A, TLP, from GND to IO | 6.8 | |||||
| IPP = 16 A, TLP, from GND to IO | 8.5 | |||||
| ILEAK | Leakage current, IO to GND | VIO = ±2.5 V | 0.2 | 100 | nA | |
| RDYN | Dynamic resistance | IO to GND | 0.15 | Ω | ||
| GND to IO | 0.15 | |||||
| CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 1 | 1.3 | pF | |
6.7 Typical Characteristics
Figure 1. Positive TLP Curve
Figure 3. 8-kV IEC Waveform
Figure 5. Surge Curve (tp = 8/20 µs), Any IO Pin to GND
Figure 7. Leakage Current vs. Temperature
Figure 9. Capacitance vs. Frequency
Figure 2. Negative TLP Curve
Figure 4. –8-kV IEC Waveform
Figure 6. Capacitance vs. Bias Voltage
Figure 8. DC Voltage Sweep I-V Curve
Figure 10. Insertion Loss