ZHCSO53G August 2010 – June 2021 TPD2EUSB30 , TPD2EUSB30A , TPD4EUSB30
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage (D+ and D- pins) | TPD2EUSB30, TPD4EUSB30 | 5.5 | V | |||
| TPD2EUSB30A | 3.6 | V | |||||
| Vclamp | Clamp voltage | D+,D– pins to ground, | IIO = 1 A | 8 | V | ||
| IIO | Current from IO port to supply pins | VIO = 2.5 V, | ID = 8 mA | 0.01 | 0.1 | μA | |
| VD | Diode forward voltage | D+,D– pins, lower clamp diode, | VIO = 2.5 V, ID = 8 mA | 0.6 | 0.8 | 0.95 | V |
| Rdyn | Dynamic resistance | D+,D– pins | I = 1 A | 0.6 | Ω | ||
| CIO-IO | Capacitance IO to IO | D+,D– pins | VIO = 2.5 V; ƒ = 100 kHz | 0.05 | pF | ||
| CIO-GND | Capacitance IO to GND | D+,D– pins (DRT) | VIO = 2.5 V; ƒ = 100 kHz | 0.7 | pF | ||
| D1+, D1-, D2+, D2- (DQA ) | 0.8 | ||||||
| VBR | Break-down voltage, TPD2EUSB30, TPD4EUSB30 | IIO = 1 mA | 7 | V | |||
| Break-down voltage, TPD2EUSB30A | IIO = 1 mA | 4.5 | V | ||||