7.1 Overview

The TPD3E001 is a three-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array. The TPD3E001 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4). This device has a 1.5-pF IO capacitance per channel, making it ideal for use in high-speed data IO interfaces. The ultra low leakage current (< 1 nA maximum) is suitable for precision analog measurements in applications like glucose meters and heart rate monitors. The wide voltage range on V_CC (up to 5.5V) gives this device the flexibility to be used in a wide variety applications. Having 3-channels of ESD protection makes this device particularly well suited to protect a micro-AB USB connector, which has three signal lines to be protected (D+, D-, ID). The V_BUS pin can also be protected by connecting it to V_CC on TPD3E001. Therefore, TPD3E001 is a one-chip solution to provide Level 4 IEC 61000-4-2 ESD protection on every pin of the micro-AB USB connector.

7.2 Functional Block Diagram

7.3 Feature Description

TPD3E001 is a uni-directional ESD protection device with low capacitance. The device is constructed with a central ESD clamp that features two hiding diodes per line to reduce the capacitive loading. This central ESD clamp is also connected to V_CC to provide protection for the V_CC line. Each IO line is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 level 4 international standard. The TPD3E001's low loading capacitance makes it ideal for protection high-speed signal terminals.

7.4 Device Functional Modes

TPD3E001 is a passive-integrated circuit that activates whenever voltages above V_BR or below the lower diodes V_forward (–0.6V) are present upon the circuit being protected. During ESD events, voltages as high as ±15 kV can be directed to ground and V_CC via the internal diode network. Once the voltages on the protected lines fall below the trigger voltage of the TPD3E001 (usually within 10's of nano-seconds) the device reverts back to a high-impedance state.