米6体育平台手机版

SLLS683F JULY 2006 – October 2015 TPD3E001

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DRS|6
DRL|5
DRY|6

散热焊盘机械数据 (封装 | 引脚)

DRY|6
- QFND138E
DRS|6
- QFND108D

订购信息

6 Specifications

6.1 Absolute Maximum Ratings⁽¹⁾

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_CC		–0.3	7	V
V_I/O	IO voltage tolerance	–0.3	V_CC + 0.3	V
T_J	Junction temperature		150	°C
	Lead temperature (soldering, 10 s)		300	°C
	Peak pulse power (tp = 8/20 µs)		90	W
	Peak pulse power (tp = 8/20 µs)		5.5	A
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±15000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1500
		IEC 61000-4-2 Contact Discharge	±8000
		IEC 61000-4-2 Air-gap Discharge	±15000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Operating Voltage	V_CC Pin	0.9	5.5	V
Operating Voltage	IOx Pin	0	V_CC	V
Operating free-air temperature, T_A		-40	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPD3E001			UNIT
		DRL (SOT)	DRS (WSON)	DRY (USON)
		5 PINS	6 PINS	6 PINS
R_θJA	Junction-to-ambient thermal resistance	266.3	91.9	374.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	111.5	106.9	223.4	°C/W
R_θJB	Junction-to-board thermal resistance	84.5	64.8	227.8	°C/W
ψ_JT	Junction-to-top characterization parameter	16.0	10.2	52.9	°C/W
ψ_JB	Junction-to-board characterization parameter	84.0	64.9	224.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	29.9	87.5	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

V_CC = 5 V ± 10%, T_A = -40°c to 85°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP⁽¹⁾	MAX	UNIT
V_CC	Supply voltage			0.9		5.5	V
I_CC	Supply current				1	100	nA
V_F	Diode forward voltage	I_F = 10 mA		0.65		0.95	V
V_BR	Breakdown Voltage	I_BR = 10mA		11			V
V_C	Channel clamp voltage⁽²⁾	T_A = 25°C, ±15-kV HBM, I_F = 10 A	Positive transients			V_CC + 25	V
		T_A = 25°C, ±15-kV HBM, I_F = 10 A	Negative transients			–25
		T_A = 25°C, ±8-kV Contact Discharge (IEC 61000-4-2), I_F = 24 A	Positive transients			V_CC + 60
			Negative transients			–60
		T_A = 25°C, ±15-kV Air-Gap Discharge (IEC 61000-4-2), I_F = 45 A	Positive transients			V_CC + 100
			Negative transients			–100
I_i/o	Channel leakage current	V_i/o = GND or V_CC				±1	nA
C_io	Channel input capacitance	V_CC = 5 V, bias of V_CC/2			1.5		pF
R_dyn	Dynamic resistance	I_i/o = 1 A, between IO pin and ground			1.2		Ω

(1) Typical values are at V_CC = 5 V and T_A = 25°C.

(2) Channel clamp voltage is not production tested.

6.6 Typical Characteristics

V_CC = 5.0 V

Figure 1. IO Capacitance vs IO Voltage

V_CC= 5.5 V

Figure 2. IO Leakage Current vs Temperature