ZHCSEZ9C January   2016  – August 2020 TPD3S714-Q1

PRODUCTION DATA  

  1. 1 项目符号
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Timing Requirements
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  AEC-Q100 Qualified
      2. 8.3.2  Short-to-Battery and Short-to-Ground Protection on VBUS_CON
      3. 8.3.3  Short-to-Battery and Short-to-VBUS Protection on VD+, VD–
      4. 8.3.4  ESD Protection on VBUS_CON, VD+, VD–
      5. 8.3.5  Low RON nFET VBUS Switch
      6. 8.3.6  High Speed Data Switches
      7. 8.3.7  Hiccup Current Limit
      8. 8.3.8  Fast Overvoltage Response Time
      9. 8.3.9  Integrated Input Enable
      10. 8.3.10 Fault Output Signal
      11. 8.3.11 Thermal Shutdown Feature
      12. 8.3.12 16-pin SSOP Package
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 Overvoltage Condition
      3. 8.4.3 Overcurrent Condition
      4. 8.4.4 Short-Circuit Condition
      5. 8.4.5 Device Logic Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Short-to-Battery Tolerance
        2. 9.2.2.2 Maximum Current on VBUS
        3. 9.2.2.3 USB Data Rate
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 VBUS Path
    2. 10.2 VIN Pin
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6.8 Timing Requirements

over operating free-air temperature range, EN = 0 V, VBUS_SYS = 5 V, VIN = 3.3 V, VD+/VD–/D+/D–/VBUS_CON = float (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ENABLE PIN
tON Enable on time Time between enable device until FLT deasserts 13 ms
OVERCURRENT PROTECTION
tBLANK Overcurrent blanking time Time from overcurrent condition until FLT assertion and VBUS FET turnoff 2 ms
tRETRY Overcurrent retry time Time from overcurrent FET shut off until FET turns back on 100 ms
tRECV Overcurrent recovery time Time from end of tRETRY until FLT deassertion if overcurrent condition is removed 8 ms
OVERVOLTAGE PROTECTION
tOVP_response OVP response time – VBUS Measured from OVP Condition to FET turnoff 2 4 µs
tOVP_response OVP response time – data switches Measured from OVP Condition to FET turnoff 200 ns
SHORT-TO-GROUND PROTECTION
tSHRT Short to ground response time CLOAD = 0 uF, Time from short condition until current falls below 120% of ISHRT 2 4 µs
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