ZHCSB23F March 2013 – September 2017 TPD4E001-Q1
PRODUCTION DATA.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VCC | Supply voltage | –0.3 | 7 | V | |
| VIO | I/O voltage tolerance | –0.3 | VCC + 0.3 | V | |
| IPP | Peak pulse current (Tp = 8/20 µs)(2) | 5.5 | A | ||
| PPP | Peak pulse power (Tp = 8/20 µs)(2) | 100 | W | ||
| TA | Free air operating temperature | –40 | 125 | °C | |
| TJ | Junction temperature | 150 | °C | ||
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) SStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC 61000-4-5.
6.2 ESD Ratings—AEC Specification
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±15000 | V | |
| Charged-device model (CDM), per AEC Q100-011 | ±750 | ||||
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 ESD Ratings—IEC Specification
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±8000 | V |
| IEC 61000-4-2 air-gap discharge | ±15000 | |||
6.4 ESD Ratings—ISO Specification
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | ISO 10605 (330 pF, 330 Ω) contact discharge | ±8000 | V |
| ISO 10605 (330 pF, 330 Ω) air-gap discharge | ±15000 | |||
6.5 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| TA | Free air operating temperature | –40 | 125 | °C |
| VCC pin | Operating voltage | 0.9 | 5.5 | V |
| IO1, IO2, IO3, IO4 pins | Operating voltage | 0 | VCC | V |
6.6 Thermal Information
| THERMAL METRIC(1) | TPD4E001-Q1 | UNIT | |
|---|---|---|---|
| DBV (SOT-23) | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 202.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 146.2 | °C/W |
| RθJB | Junction-to-board thermal resistance | 47.1 | °C/W |
| ψJT | Junction-to-top characterization parameter | 37.6 | °C/W |
| ψJB | Junction-to-board characterization parameter | 46.7 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.7 Electrical Characteristics
VCC = 5 V ± 10%, over operating free-air temperature range (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| ICC | Supply current | 1 | 200 | nA | |||
| VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
| VBR | Breakdown voltage | IBR = 10 mA | 11 | V | |||
| VCLAMP | Clamping voltage | Surge strike(2) on IO pin, GND pin grounded, VCC = 5.5 V, IPP = 5.5 A | Positive transients | 16 | V | ||
| VRWM | Reverse standoff voltage | IO pin to GND pin | 5.5 | V | |||
| IIO | Channel leakage current | VIO = GND to VCC | ±10 | nA | |||
| CIO | Channel input capacitance | VCC = 5 V, bias of VCC/2, f = 10 MHz | 1.5 | pF | |||
(1) Typical values are at VCC = 5 V and TA = 25°C.
6.8 Typical Characteristics
Figure 1. IO Capacitance vs IO Voltage (VCC = 5 V)
Figure 3. Peak Pulse Waveform, VCC = 5.5 V
Figure 2. IO Leakage Current vs Temperature