ZHCS291O July 2006 – July 2019 TPD4E001
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VCC | Supply voltage | 0.9 | 5.5 | V | |||
ICC | Supply current | 1 | 100 | nA | |||
VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
VBR | Breakdown Voltage | IBR = 10 mA | 11 | V | |||
VC | Channel clamp voltage | TA = 25°C, ±15-kV HBM,
IF = 10 A |
Positive transients | VCC + 25 | V | ||
Negative transients | –25 | ||||||
TA = 25°C,
±8-kV contact discharge (IEC 61000-4-2), IF = 24 A |
Positive transients | VCC + 60 | |||||
Negative transients | –60 | ||||||
TA = 25°C,
±15-kV air-gap discharge (IEC 61000-4-2), IF = 45 A |
Positive transients | VCC + 100 | |||||
Negative transients | –100 | ||||||
Surge strike on IO pin,
GND pin grounded, IPP = 5 A, 8/20 µs(2) |
Positive transients | 17 | |||||
VRWM | Reverse stand-off voltage | IO pin to GND pin | 5.5 | V | |||
II/O | Channel leakage current | Vi/o = GND to VCC | ±1 | nA | |||
CI/O | Channel input capacitance | VCC = 5 V, bias of VCC/2; ƒ = 10 MHz | 1.5 | pF |