ZHCSAP5E December   2012  – October 2024 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 6.3.2 Transient Protection for 4 I/O Lines
      3. 6.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 6.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 6.3.5 Low ESD Clamping Voltage
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 7.2.2.2 Operating Frequency
      3. 7.2.3 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Examples
  9. Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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Layout Guidelines

  • Place the device as close to the connector as possible.
    • EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces, resulting in early system failures.
    • The PCB designer should minimize the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the diode and the connector.
  • Route the protected traces as straight as possible.
  • Eliminate any sharp corners on the protected traces between the diode and the connector by using rounded corners with the largest radii possible.
    • Electric fields tend to build up on corners, increasing EMI coupling.