ZHCSAP5E December   2012  – October 2024 TPD4E1B06

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Ultra Low Leakage Current 0.5 nA (Maximum)
      2. 6.3.2 Transient Protection for 4 I/O Lines
      3. 6.3.3 I/O Capacitance 0.7 pF (Typical)
      4. 6.3.4 Bi-Directional (ESD) Protection Diode Array
      5. 6.3.5 Low ESD Clamping Voltage
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Signal Range on IO1, IO2, IO3, and IO4 Pins
        2. 7.2.2.2 Operating Frequency
      3. 7.2.3 Application Curves
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Examples
  9. Device and Documentation Support
    1. 8.1 接收文档更新通知
    2. 8.2 支持资源
    3. 8.3 Trademarks
    4. 8.4 静电放电警告
    5. 8.5 术语表
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

ESD Ratings

MINMAXUNIT
TstgStorage temperature range–65155°C
V(ESD)Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)–4.04.0kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2)–1.51.5
IEC 61000-4-2 contact ESD–1212
IEC 61000-4-2 air-gap ESD–1515
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as 4 kV may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as 1.5 kV may actually have higher performance.