ZHCSAT4D December 2012 – April 2017 TPD4E1U06
PRODUCTION DATA.
7 Detailed Description
7.1 Overview
The TPD4E1U06 is a quad channel unidirectional TVS ESD protection diode with ultra low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 international standard. Typical application areas include HDMI, USB2.0, MHL, and DisplayPort. Its 0.8-pF line capacitance makes it suitable for a wide range of applications.
7.2 Functional Block Diagram
Figure 9. Circuit Schematic Diagram
7.3 Feature Description
7.3.1 IEC 61000-4-2 Level 4 ESD Protection
The I/O pins can withstand ESD events up to ±15-kV contact and air. An ESD/surge clamp diverts the current to ground.
7.3.2 IEC 61000-4-5 Surge Protection
The IO pins can withstand surge events up to 3 A and 45 W (8/20-μs waveform). An ESD-surge clamp diverts this current to ground.
7.3.3 IEC 61000-4-4 EFT Protection
The IO pins can withstand an electrical fast transient burst of up to 80 A (5/50-ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
7.3.4 IO Capacitance
The capacitance between each I/O pin to ground is 0.8 pF.
7.3.5 DC Breakdown Voltage
The DC breakdown voltage of each I/O pin is a minimum of 6.5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 5.5 V.
7.3.6 Ultra Low Leakage Current
The I/O pins feature an ultra-low leakage current of 10 nA (Maximum) with a bias of 2.5 V.
7.3.7 Low ESD Clamping Voltage
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 11 V (IPP = 1 A).
7.3.8 Industrial Temperature Range
This device features an industrial operating range of –40°C to +125°C.
7.3.9 Small, Easy-to-Route Packages
The layout of this device makes it simple to add protection to the design. Industry standard packages allow for easy additions to the board and easy layout.
7.4 Device Functional Modes
The TPD4E1U06 is a passive integrated circuit that triggers when voltages are above VBR or below the forward diode drop. During ESD events, voltages as high as ±15 kV can be directed to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E1U06 (usually within 10s of nano-seconds) the device reverts to passive.