SLVS817G May   2008  – June 2015 TPD4S009 , TPD4S010

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ±8-kV IEC61000-4-2 Level 4 Contact ESD Protection
      2. 7.3.2 IEC61000-4-5 Surge Protection
      3. 7.3.3 I/O Capacitance
      4. 7.3.4 Low Leakage Current
      5. 7.3.5 Supports High-Speed Differential Data Rates
      6. 7.3.6 Ultra-low Matching Capacitance Between Differential Signal Pairs
      7. 7.3.7 Ioff Feature for the TPD4S009
      8. 7.3.8 Industrial Temperature Range
      9. 7.3.9 Easy Flow-Through Routing
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on Pin 1, 2, 4, or 5
        2. 8.2.2.2 Bandwidth on Pin 1, 2, 4, or 5
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage range for TPD4S009 –0.3 6 V
VIO IO signal voltage range 0 VCC V
TA Characterized free-air operating temperature range –40 85 °C
Lead temperature, 1.6 mm (1/16 in) from case for 10 s) 260 °C
Peak pulse power (tp = 8/20 μs) 25 W
Peak pulse current (tp = 8/20 μs) 2.5 A
Tstg Storage temperature range –65 125 °C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
IEC 61000-4-2 Contact Discharge ±8000
IEC 61000-4-2 Air-Gap Discharge ±9000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
TA Operating free-air Temperature Range -40 85 °C
Operating Voltage VCC Pin 0.9 5.5 V
IOx Pin (TPD4S009) 0 VCC
IOx Pin (TPD4S010) 0 5.5

6.4 Thermal Information

THERMAL METRIC(1) TPD4S009 TPD4S010 UNIT
DBV (SOT) DCK (SOT) DGS (VSSOP) DRY (USON) DQA (USON)
6 PINS 6 PINS 10 PINS 6 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 201.7 254.4 205.0 380.55 265.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 175.0 123.9 76.1 229.07 129.4 °C/W
RθJB Junction-to-board thermal resistance 47.6 94.0 126.0 235.57 189.7 °C/W
ψJT Junction-to-top characterization parameter 52.8 14.5 9.4 56.76 31.1 °C/W
ψJB Junction-to-board characterization parameter 47.1 92.3 124.3 232.80 189.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A 91.03 N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse standoff voltage Any IO pin to ground 5.5 V
VBR Breakdown voltage IIO = 1 mA Any IO pin to ground 9 V
IIO IO port current VIO = 3.3 V, VCC = 5 V Any IO pin 0.01 0.1 μA
Ioff Current from IO port to supply pins VIO = 3.3 V, VCC = 5 V Any IO pin 0.01 0.1 μA
VD Diode forward voltage IIO = 8 mA Lower clamp diode 0.6 0.8 0.95 V
RDYN Dynamic resistance I = 1 A Any IO pin 1.1 Ω
CIO IO capacitance VCC = 5 V, VIO = 2.5 V Any IO pin 0.8 pF
ICC Operating supply current VIO = Open, VCC = 5 V VCC pin 0.1 1 μA

6.6 Typical Characteristics

TPD4S009 TPD4S010 g_insloss_iognd_lvs817.gifFigure 1. Insertion Loss S21 – I/O to GND
TPD4S009 TPD4S010 g_iocap_v_lvs817.gif
VCC = 5 V
Figure 3. IO Capacitance vs Input Voltage
TPD4S009 TPD4S010 g_peakpulse_lvs817.gif
8/20 μs Pulse
Figure 5. Pulse Waveform
TPD4S009 TPD4S010 g_leak_ta_lvs817.gif
VIO = 2.5 V
Figure 2. Leakage Current vs Temperature
TPD4S009 TPD4S010 g_clampwaveforms_lvs817.gif
8-kV Contact, Average of Ten Waveforms
Figure 4. IEC Clamping Waveforms
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