ZHCS116G May 2011 – December 2015 TPD4S014
PRODUCTION DATA.
- 1 特性
- 2 应用范围
- 3 说明
- 4 修订历史记录
- 5 Pin Configuration and Functions
- 6 Specifications
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7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Input Voltage Protection at VBUS up to 28 V DC
- 7.3.2 Low RON nFET Switch
- 7.3.3 ESD Performance D+/D-/ID/VBUS Pins
- 7.3.4 Overvoltage and Undervoltage Lockout Features
- 7.3.5 Capacitance TVS ESD Clamp for USB2.0 Hi-Speed Data Rate
- 7.3.6 Start-up Delay
- 7.3.7 OVP Glitch Immunity
- 7.3.8 Integrated Input Enable and Status Output Signal
- 7.3.9 Thermal Shutdown
- 7.4 Device Functional Modes
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文档支持
- 12机械、封装和可订购信息
11 器件和文档支持
11.1 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
11.2 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.