ZHCSLP7C December 2019 – February 2021 TPD4S311 , TPD4S311A
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| CC OVP Switches | ||||||
| RON | On Resistance of CC OVP FETs | CCx = 5.5 V, TJ ≤ 85 ℃ (TPD4S311) | 378 | 550 | mΩ | |
| CCx = 5.5 V, TJ ≤ 85 ℃ (TPD4S311A) | 232 | 405 | mΩ | |||
| CON_CC | Equivalent on Capacitance | Capacitance from CCx or C_CCx to GND when device is powered. Measure atVC_CCx/VCCx = 0 V to 1.2 V, f = 400 kHz. | 45 | 74 | 120 | pF |
| RD_DB | Dead Battery Pull-Down Resistors (only present when device is unpowered) | VC_CCx = 2.6 V | 4.1 | 5.1 | 6.1 | kΩ |
| VTH_DB | Threshold voltage of the pull-down FET in series with RD during dead battery | IC_CCx = 80 μA | 0.5 | 0.9 | 1.2 | V |
| VOVPCC | OVP Threshold on CC Pins | Place 5.5 V on C_CCx. Step up C_CCx until FLT pin is asserted. Put 100-mA load through the CC FET and see the FET shuts off. | 5.75 | 6.0 | 6.2 | V |
| VOVPCC_HYS | Hysteresis on CC OVP | Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_CCx. | 50 | mV | ||
| BWON | On Bandwidth Single Ended (-3dB) | Measure the -3 dB bandwidth
from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 1.2 V. | 100 | MHz | ||
| VSTBUS_CC | Short-to-VBUS tolerance on the CC pins | Hot-Plug C_CCx with a 1 meter USB Type C Cable, place a 30-Ω load on CCx | 24 | V | ||
| VSTBUS_CC_CLAMP | Short-to-VBUS System-Side Clamping Voltage on the CC pins (CCx) | Hot-Plug C_CCx with a 1 meter USB Type C Cable. Hot-Plug voltage C_CCx = 24 V. VPWR = 3.3 V. Place a 30-Ω load on CCx. | 8 | V | ||
| SBU OVP Switches | ||||||
| RON | On Resistance of SBU OVP FETs | SBUx = 3.6 V. –40°C ≤ TJ ≤ +85°C | 4 | 6.5 | Ω | |
| CON_SBU | Equivalent on Capacitance | Capacitance from SBUx or C_SBUx to GND when device is powered. Measure at VC_SBUx/VSBUx = 0.3 V to 4.2 V. | 6 | pF | ||
| VOVPSBU | OVP Threshold on SBU Pins | Place 3.6 V on C_SBUx. Step up C_SBUx until FLT pin is asserted. | 4.35 | 4.5 | 4.7 | V |
| VOVPSBU_HYS | Hysteresis on SBU OVP | Place 5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_SBUx. | 50 | mV | ||
| BWON | On Bandwidth Single Ended (-3dB) | Measure the –3 dB bandwidth from C_SBUx to SBUx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 3.6 V. | 900 | MHz | ||
| XTALK | Crosstalk | Measure crosstalk at f = 1 MHz from SBU1 to C_SBU2 or SBU2 to C_SBU1. Vcm1 = 3.6 V, Vcm2 = 0.3 V. Terminate open sides to 50 Ω. | -70 | dB | ||
| VSTBUS_SBU | Short-to-VBUS tolerance on the SBU pins | Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Put a 100-nF capacitor in series with a 40-Ω resistor to GND on SBUx. | 24 | V | ||
| VSTBUS_SBU_CLAMP | Short-to-VBUS System-Side Clamping Voltage on the SBU pins (SBUx) | Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Hot-Plug voltage C_SBUx = 24 V. VPWR = 3.3 V. Put a 150-nF capacitor in series with a 40-Ω resistor to GND on SBUx. | 8 | V | ||
| Power Supply and Leakage Currents | ||||||
| VPWR_UVLO | VPWR Under Voltage Lockout | Place 1 V on VPWR and raise voltage until SBU or CC FETs turn-on. | 2.1 | 2.3 | 2.5 | V |
| VPWR_UVLO_HYS | VPWR UVLO Hysteresis | Place 3 V on VPWR and lower voltage until SBU or CC FETs turnoff; measure difference between rising and falling UVLO to calculate hysteresis. | 100 | 150 | 200 | mV |
| IVPWR | VPWR supply current | VPWR = 3.3 V (typical), VPWR = 4.5 V (maximum). –40°C ≤ TJ ≤ +85°C. | 90 | 135 | µA | |
| IC_CC_LEAK | Leakage current for C_CCx pins when device is powered | VPWR = 3.3 V, VC_CCx = 3.6 V, CCx pins are floating, measure leakage current into C_CCx pins. | 5 | µA | ||
| IC_SBU_LEAK | Leakage current for C_SBUx pins when device is powered | VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx pins are floating, measure leakage current into C_SBUx pins. Result should be same if SBUx side is biased and C_SBUx is left floating.-40°C ≤ TJ ≤ +85°C | 3 | µA | ||
| IC_CC_LEAK_OVP | Leakage current for C_CCx pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage current into C_CCx pins. | 1200 | µA | ||
| IC_SBU_LEAK_OVP | Leakage current for C_SBUx pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage current into C_SBUx pins. | 400 | µA | ||
| ICC_LEAK_OVP | Leakage current for CC pins when device is in OVP | VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage current out of CCx pins. | 30 | µA | ||
| ISBU_LEAK_OVP | Leakage current for SBU pins when device is in OVP | VPWR = 0 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage current into SBUx pins. | -1 | 1 | µA | |
| /FLT Pin | ||||||
| VOL | Low-level output voltage | IOL = 3 mA. Measure voltage at FLT pin. | 0.4 | V | ||
| Over Temperature Protection | ||||||
| TSD_RISING | The rising over-temperature protection shutdown threshold | 150 | 175 | °C | ||
| TSD_FALLING | The falling over-temperature protection shutdown threshold | 130 | 140 | °C | ||
| TSD_HYST | The over-temperature protection shutdown threshold hysteresis | 35 | °C | |||