ZHCSDL8A December 2014 – February 2015 TPD6F002-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VIO | IO to GND | 5.75 | V | ||
TJ | Junction temperature | 125 | °C | ||
Tstg | Storage temperature range | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q100-002, all pins(1) | ±10 | kV | |
Charged device model (CDM), per AEC Q101-005, all pins | ±1.5 | ||||
IEC 61000-4-2 Contact Discharge | ±20 | ||||
IEC 61000-4-2 Air-Gap Discharge | ±30 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIO | Input pin voltage | 0 | 5.5 | V | |
TA | Operating free-air temperature | -40 | 125 | °C |
THERMAL METRIC(1) | TPD6F002-Q1 | UNIT | |
---|---|---|---|
DSV | |||
12 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 120.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 104.4 | |
RθJB | Junction-to-board thermal resistance | 78.5 | |
ψJT | Junction-to-top characterization parameter | 13.0 | |
ψJB | Junction-to-board characterization parameter | 77.7 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 66.5 |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
VBR | DC breakdown voltage | IIO = 10 μA | 6 | V | ||
R | Resistance | VIN = 3.3 V, IIn-to-out = 1mA | 85 | 100 | 115 | Ω |
C | Capacitance (C1 or C2) | VIO = 2.5 V | 17 | pF | ||
IIO | Channel leakage current | VIO = 3.3 V | 1 | 20 | nA | |
fC | Cut-off frequency | ZSOURCE = 50 Ω, ZLOAD = 50 Ω | 100 | MHz |