SLLS876B August   2008  – May 2016 TPD6F002

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Six-Channel EMI Filtering
      2. 7.3.2 Pi-Style Filter Configuration
      3. 7.3.3 Robust ESD Protection
      4. 7.3.4 Low Leakage Current
      5. 7.3.5 Space-Saving WSON Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on All Protected Lines
        2. 8.2.2.2 Operating Frequency
        3. 8.2.2.3 Crosstalk Response
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
  • DSV|12
散热焊盘机械数据 (封装 | 引脚)
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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIO I/O to GND 6 V
Lead temperature (soldering, 10 s) 300 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model(1) ±15000 V
IEC 61000-4-2 contact discharge ±20000
IEC 61000-4-2 air-gap discharge ±30000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO Input pin voltage 0 5.5 V
TA Operating free-air temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) TPD6F002 UNIT
DSV (WSON)
12 PINS
RθJA Junction-to-ambient thermal resistance 120.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 104.4 °C/W
RθJB Junction-to-board thermal resistance 78.5 °C/W
ψJT Junction-to-top characterization parameter 13 °C/W
ψJB Junction-to-board characterization parameter 77.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 66.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = –40°C to 85°C (Unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VBR DC breakdown voltage IIO = 10 μA 6 V
R Resistance 85 100 115 Ω
C Capacitance (C1 or C2) VIO = 2.5 V 17 pF
IIO Channel leakage current VIO = 3.3 V 1 20 nA
fC Cutoff frequency ZSOURCE = 50 Ω, ZLOAD = 50 Ω 100 MHz
(1) Typical values are at TA = 25°C.

6.6 Typical Characteristics

TPD6F002 compfilres_lls876.gif Figure 1. DC Voltage-Current Sweep Across Input, Output Pins
TPD6F002 g_rf_lls876.gif
TA = 25°C, DC Bias = 0 V, 50 Ω Environment
Figure 3. TPD6F002 Typical Insertion-Loss Characteristics
TPD6F002 filcapvsiv_lls876.gif Figure 2. Series Resistance vs Temperature
TPD6F002 g_cap_lls876.gif
Figure 4. Capacitance (C1 or C2) vs Bias Voltage
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