SLLS907E August   2008  – August 2014 TPD4F003 , TPD6F003 , TPD8F003

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
      1. 6.6.1 IEC Clamping Waveforms (clamp voltage measured both at Ch_Out and Ch_In)
      2. 6.6.2 Channel-to-Channel Crosstalk
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Four-, Six-, and Eight-Channel EMI Filtering for Data Ports
      2. 7.3.2 -3 dB Bandwidth of 200 MHz
      3. 7.3.3 Greater Than 25 dB Attenuation at 1 GHz
      4. 7.3.4 Robust ESD Protection Exceeds IEC 61000-4-2
      5. 7.3.5 Pi-Style (C-R-C) Filter Configuration
      6. 7.3.6 Low 10-nA Leakage Current
      7. 7.3.7 Easy Flow-Through Routing
    4. 7.4 Device Functional Modes
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on All Protected Lines
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DQD|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO IO to GND 6 V
TJ Junction temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±15 kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500 V
IEC 61000-4-2 ESD Rating - Contact ±12 kV
IEC 61000-4-2 ESD Rating - Air ±20
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO 0 5.5 V
TA –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) TPD4F003 TPD6F003 TPD8F003 UNIT
DQD
8 PINS 12 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 115.6 89.2 80.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 108.5 100.1 88.3
RθJB Junction-to-board thermal resistance 66.4 50.5 45.8
ψJT Junction-to-top characterization parameter 6.8 9.4 9.2
ψJB Junction-to-board characterization parameter 65.9 50.0 45.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 33.2 31.0 31.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VBR DC breakdown voltage IIO = 10 μA 6 V
R Resistance 85 100 115 Ω
C Capacitance (C1 or C2) VIO = 2.5 V 8.5 pF
IIO Channel leakage current VIO = 3.3 V 10 nA
fC Cut-off frequency ZSOURCE = 50 Ω, ZLOAD = 50 Ω 200 MHz
(1) Typical values are at TA = 25°C.

6.6 Typical Characteristics

6.6.1 IEC Clamping Waveforms
(clamp voltage measured both at Ch_Out and Ch_In)

ieclcamp_8kv_lls907.gifFigure 1. With 8 kV Contact ESD Stress at Ch_Out
ieclcamp_neg8kv_lls907.gifFigure 3. With -8 kV Contact ESD Stress at Ch_Out
freqresp_lls907.gif
Figure 5. Frequency Response
ieclcamp_12kv_lls907.gifFigure 2. With 12 kV Contact ESD Stress at Ch_Out
ieclcamp_neg12kv_lls907.gifFigure 4. With -12 kV Contact ESD Stress at Ch_Out
vbr_lls907.gifFigure 6. DC Voltage-Current Sweep Across Input/Output Pins

6.6.2 Channel-to-Channel Crosstalk

xtalk_tpd4_lls907.gifFigure 7. TPD4F003
xtalk_tpd8_lls907.gifFigure 9. TPD8F003
xtalk_tpd6_lls907.gifFigure 8. TPD6F003
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