ZHCSIE7 June   2018 TPD8S300A

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     CC 和 SBU 过压保护
    2.     CC 和 DP/DM 过压保护
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings—JEDEC Specification
    3. 7.3 ESD Ratings—IEC Specification
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins or CC1, CC2, DP, DM Pins): 24-VDC Tolerant
      2. 8.3.2 8-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2, DP_T, DM_T, DP_B, DM_B Pins)
      3. 8.3.3 CC1, CC2 Overvoltage Protection FETs 600 mA Capable for Passing VCONN Power
      4. 8.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      5. 8.3.5 Advantages over TPD8S300
        1. 8.3.5.1 Improved Dead Battery Performance
        2. 8.3.5.2 USB Type-C Port Stays Connected during an IEC 61000-4-2 ESD Strike
      6. 8.3.6 3-mm × 3-mm WQFN Package
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VBIAS Capacitor Selection
        2. 9.2.2.2 Dead Battery Operation
        3. 9.2.2.3 CC Line Capacitance
        4. 9.2.2.4 Additional ESD Protection on CC and SBU Lines
        5. 9.2.2.5 FLT Pin Operation
        6. 9.2.2.6 How to Connect Unused Pins
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.7 Timing Requirements

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
POWER-ON and Off TIMINGS
tON_FET Time from crossing rising VPWR UVLO until CC and SBU OVP FETs are on 1.3 3.5 ms
tON_FET_DB Time from crossing rising VPWR UVLO until CC and SBU OVP FETs are on and the dead battery resistors are turned off 5.7 9.5 ms
dVPWR_OFF/dt Minimum Slew rate allowed to guarantee CC and SBU FETs turnoff during a power off –0.5 V/µs
OVER VOLTAGE PROTECTION
tOVP_RESPONSE_CC OVP response time on the CC pins. Time from OVP asserted until OVP FETs turnoff 70 ns
tOVP_RESPONSE_SBU OVP response time on the SBU pins. Time from OVP asserted until OVP FETs turnoff 80 ns
tOVP_RECOVERY_CC_1_FET OVP recovery time on the CC pins. Once an OVP has occurred, the minimum time duration until the CC FETs turn back on. OVP must be removed for CC FETs to turn back on 0.93 ms
tOVP_RECOVERY_CC_1_DB OVP recovery time on the CC pins. Once an OVP has occurred, the minimum time duration until the CC FETs turn back on and the dead battery resistors turn off. OVP must be removed for CC FETs to turn back on 5 ms
tOVP_RECOVERY_SBU_1 OVP recovery time on the SBU pins. Once an OVP has occurred, the minimum time duration until the SBU FETs turn back on. OVP must be removed for SBU FETs to turn back on 0.62 ms
tOVP_RECOVERY_CC_2_FET OVP recovery time on the CC pins. Time from OVP Removal until CC FETs turn back on, if device has been in OVP > 0.6 ms 0.61 ms
tOVP_RECOVERY_CC_2_DB OVP recovery time on the CC pins. Time from OVP Removal until CC FETs turn back on and dead battery resistors turn off, if device has been in OVP > 0.6 ms 4.75 ms
tOVP_RECOVERY_SBU_2 OVP recovery time on the SBU pins. Time from OVP Removal until SBU FETs turn back on, if device has been in OVP > 0.6 ms 0.3 ms
tOVP_FLT_ASSERTION Time from OVP asserted to FLT assertion 20 µs
tOVP_FLT_DEASSERTION Time from CC FET turnon after an OVP to FLT deassertion 4.1 ms
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