ZHCSQN1 October   2023 TPS1210-Q1

ADVANCE INFORMATION  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  9. Parameter Measurement Information
  10. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 9.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 9.3.3 Short-Circuit Protection
        1. 9.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 9.3.3.2 Short-Circuit Protection With Latch-Off
      4. 9.3.4 Undervoltage Protection (UVLO)
      5. 9.3.5 Reverse Polarity Protection
      6. 9.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 9.3.7 TPS1210x-Q1 as a Simple Gate Driver
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Application Limitations
        1. 10.1.1.1 Short-Circuit Protection Delay
        2. 10.1.1.2 Short-Circuit Protection Threshold
    2. 10.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
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Application Information

The TPS1210x-Q1 family is a 45-V, low IQ, smart high side driver with protection and diagnostics. The TPS1210x-Q1 device architecture is design to drive and control back-to-back N-Channel MOSFETs independently in common source configuration with separate control inputs (INP1, INP2), which makes TPS1210x-Q1 an excellent choice to realize circuit breaker in battery management system (BMS). The strong (2-A) GATE drivers enable switching parallel MOSFETs in high current applications such as circuit breaker in powertrain (DC/DC converter), driving loads in power distribution unit, circuit breaker in 12-V BMS, and so forth.

The TPS1210x-Q1 device provides configurable short-circuit protection using ISCP and TMR pins for adjusting the threshold and response time respectively. Auto-retry and latch-off fault behavior can be configured. By using CS+ and CS– pins, current sensing can be done either by an external sense resistor or by MOSFET VDS sensing. High side or low side current sense resistor configuration is possible by using CS_SEL pin input. The device also features diagnosis of the internal short circuit comparator using external control on SCP_TEST input.

The following design procedure can be used to select the supporting component values based on the application requirement.