ZHCSQN1 October   2023 TPS1210-Q1

ADVANCE INFORMATION  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  9. Parameter Measurement Information
  10. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 9.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 9.3.3 Short-Circuit Protection
        1. 9.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 9.3.3.2 Short-Circuit Protection With Latch-Off
      4. 9.3.4 Undervoltage Protection (UVLO)
      5. 9.3.5 Reverse Polarity Protection
      6. 9.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 9.3.7 TPS1210x-Q1 as a Simple Gate Driver
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Application Limitations
        1. 10.1.1.1 Short-Circuit Protection Delay
        2. 10.1.1.2 Short-Circuit Protection Threshold
    2. 10.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

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Overview

The TPS1210x-Q1 family is a 45-V, low IQ, smart high side driver with protection and diagnostics. With wide operating voltage range of 3.5 V – 40 V, the device is designed for 12-V, system designs. The device can withstand and protect the loads from negative supply voltages down to –40 V.

The device has two strong (2-A) GATE drivers with separate control inputs (INP1, INP2) to drive back-to-back MOSFETs in common source configuration. Strong GATE driving enables power switching using parallel FETs in high current system designs. TPS12100-Q1 has active high control inputs and TPS12101-Q1 has active low control inputs.

The device provides configurable short-circuit protection using ISCP and TMR pins for adjusting the threshold and response time respectively. Auto-retry and latch-off fault behavior can be configured. With TPS1210x-Q1, current sensing an be done either by an external sense resistor or by MOSFET VDS sensing. High side or low side current sense resistor configuration is possible by using CS_SEL pin input. Diagnosis of the integrated short circuit comparator is possible using external control on SCP_TEST input.

The device indicates fault (FLT) on open drain output during short circuit, charge pump undervoltage, and input undervoltage conditions.

Low Quiescent Current of 35 µA in operation enables always ON system designs. Quiescent current reduces to 1.5 μA (typical) with EN/UVLO low.