ZHCSQN1 October   2023 TPS1210-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, G2, BST, SRC)
      2. 9.3.2 Capacitive Load Driving Using FET Gate (G1PU, G1PD) Slew Rate Control
      3. 9.3.3 Short-Circuit Protection
        1. 9.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 9.3.3.2 Short-Circuit Protection With Latch-Off
      4. 9.3.4 Undervoltage Protection (UVLO)
      5. 9.3.5 Reverse Polarity Protection
      6. 9.3.6 Short-Circuit Protection Diagnosis (SCP_TEST)
      7. 9.3.7 TPS1210x-Q1 as a Simple Gate Driver
    4. 9.4 Device Functional Modes
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Application Limitations
        1. 10.1.1.1 Short-Circuit Protection Delay
        2. 10.1.1.2 Short-Circuit Protection Threshold
    2. 10.2 Typical Application: Circuit Breaker in Battery Management System (BMS) using Low Side Current Sense
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Tape and Reel Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±2000 V
Charged device model (CDM), per AEC Q100-011 Corner pins (EN/UVLO, VS, SCP_TEST, G2) ±750
Other pins ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
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