ZHCSIV1F September 2018 – February 2023 TPS1663
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE | ||||||
| V(IN), V(P_IN) | Operating input voltage | 4.5 | 60 | V | ||
| IQ(ON) | Supply current | Enabled: V( SHDN) = 2 V | 1.38 | 1.7 | mA | |
| IQ(OFF) | V( SHDN) = 0 V | 21 | 60 | µA | ||
| V(OVC) | Over voltage clamp | TPS16632 only, V(IN) > 40 V, I(OUT) = 1 mA | 35.7 | 36.6 | 39 | V |
| UNDERVOLTAGE LOCKOUT (UVLO) INPUT | ||||||
| V(UVLOR) | UVLO threshold voltage, rising | 1.176 | 1.2 | 1.224 | V | |
| V(UVLOF) | UVLO threshold voltage, falling | 1.09 | 1.122 | 1.15 | V | |
| I(UVLO) | UVLO Input leakage current | 0 V ≤ V(UVLO) ≤ 60 V | –150 | 8 | 150 | nA |
| OVERVOLTAGE PROTECTION (OVP) INPUT | ||||||
| V(OVPR) | over-voltage threshold voltage, rising | 1.176 | 1.2 | 1.224 | V | |
| V(OVPF) | over-voltage threshold voltage, falling | 1.09 | 1.122 | 1.15 | V | |
| I(OVP) | OVP Input leakage current | 0 V ≤ V(OVP) ≤ 4 V | –150 | 0 | 150 | nA |
| CURRENT LIMIT PROGRAMMING (ILIM) | ||||||
| I(OL) | Over Load current limit | R(ILIM) = 30 kΩ, V(IN) – V(OUT) = 1 V | 0.54 | 0.6 | 0.66 | A |
| R(ILIM) = 9 kΩ, V(IN) – V(OUT) = 1 V | 1.84 | 2 | 2.16 | A | ||
| R(ILIM) = 4.02 kΩ, V(IN) – V(OUT) = 1 V | 4.185 | 4.5 | 4.815 | A | ||
| R(ILIM) = 3 kΩ, V(IN) – V(OUT) = 1 V | 5.58 | 6 | 6.42 | A | ||
| I(FASTRIP) | Fast-trip comparator threshold | 2xI(OL) | A | |||
| I(SCP) | Short Circuit Protect current | 45 | A | |||
| OUTPUT POWER LIMITING CONTROL (PLIM) INPUT – TPS16632 ONLY | ||||||
| V(SEL_PLIM) | Power Limit Feature select threshold | 180 | 210 | 240 | mV | |
| I(PLIM) | PLIM sourcing current | V(PLIM) = 0 V | 4.4 | 5.02 | 5.6 | µA |
| P(PLIM) | Max Output power | R(PLIM) = 100 kΩ | 94 | 100 | 106 | W |
| R(PLIM) = 150 kΩ (1) | 141.9 | 151 | 160.1 | W | ||
| PASS FET OUTPUT (OUT) | ||||||
| RON | IN to OUT total ON resistance | 0.6 A ≤ I(OUT) ≤ 6 A,TJ = 25°C | 26 | 30.44 | 34.5 | mΩ |
| RON | IN to OUT total ON resistance | 0.6 A ≤ I(OUT) ≤ 6 A,TJ = 85°C | 33 | 45 | mΩ | |
| RON | IN to OUT total ON resistance | 0.6 A ≤ I(OUT) ≤ 6 A, –40°C ≤ TJ ≤ +125°C | 19 | 30.44 | 53 | mΩ |
| OUTPUT RAMP CONTROL (dVdT) | ||||||
| I(dVdT) | dVdT charging current | V(dVdT) = 0 V | 1.775 | 2 | 2.225 | µA |
| GAIN(dVdT) | dVdT to OUT gain | V(OUT) /V(dVdT) | 23.5 | 25 | 26 | V/V |
| V(dVdTmax) | dVdT maximum capacitor voltage | 3.8 | 4.17 | 4.75 | V | |
| R(dVdT) | dVdT discharging resistance | 10 | 16.6 | 26.6 | Ω | |
| CURRENT MONITOR OUTPUT (IMON) | ||||||
| GAIN(IMON) | Gain factor I(IMON):I(OUT) | 0.6 A ≤ I(OUT) < 2 A | 25.66 | 27.9 | 30.14 | µA/A |
| 2 A ≤ I(OUT) ≤ 6 A | 26.22 | 27.9 | 29.58 | µA/A | ||
| LOW IQ SHUTDOWN ( SHDN) INPUT | ||||||
| V( SHDN) | Open circuit voltage | I( SHDN) = 0.1 µA | 2.48 | 2.7 | 3.3 | V |
| V(SHUTF) | SHDN threshold voltage for low IQ shutdown, falling | 0.8 | V | |||
| V(SHUTR) | SHDN threshold rising | 2 | V | |||
| I( SHDN) | Leakage current | V( SHDN) = 0 V | –10 | µA | ||
| FAULT FLAG ( FLT): ACTIVE LOW | ||||||
| R( FLT) | FLT Pull-down resistance | 36 | 70 | 130 | Ω | |
| I( FLT) | FLT Input leakage current | 0 V ≤ V( FLT) ≤ 60 V | –150 | 6 | 150 | nA |
| POWER GOOD (PGOOD) | ||||||
| R(PGOOD) | PGOOD Pull-down resistance | 36 | 70 | 130 | Ω | |
| I(PGOOD) | PGOOD Input leakage current | 0 V ≤ V(PGOOD) ≤ 60 V | –150 | 6 | 150 | nA |
| THERMAL PROTECTION | ||||||
| T(J_REG) | Thermal regulation set point | 136 | 145 | 154 | °C | |
| T(TSD) | Thermal shutdown (TSD) threshold, rising | 165 | °C | |||
| T(TSDhyst) | TSD hysteresis | 11 | °C | |||
| MODE | ||||||
| MODE_SEL | Mode selection | MODE = Open | Latch | |||
| MODE = Short to GND | Auto – Retry | |||||