ZHCSJY9B June   2019  – November 2021 TPS1HB50-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SNS Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
          2. 9.3.1.3.2 Driving Inductive Loads
        4. 9.3.1.4 Reverse Battery
        5. 9.3.1.5 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 Fault Indication and SNS Mux
        4. 9.3.2.4 Resistor Sharing
        5. 9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC-Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 RILIM Calculation
        3. 10.2.2.3 Diagnostics
          1. 10.2.2.3.1 Selecting the RISNS Value
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.5 Electrical Characteristics

VBB = 6 V to 18 V, TJ = –40°C to 150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT VOLTAGE AND CURRENT
VDSCLAMP VDS clamp voltage 40 46 V
VBBCLAMP VBB clamp voltage 58 76 V
VUVLOF VBB undervoltage lockout falling Measured with respect to the GND pin of the device 2.0 3 V
VUVLOR VBB undervoltage lockout rising Measured with respect to the GND pin of the device 2.2 3 V
ISB Standby current (total device leakage including MOSFET channel) VBB = 13.5 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 0.1 µA
VBB = 13.5 V, TJ = 85°C,
VEN = VDIA_EN = 0 V, VOUT = 0 V		 0.5 µA
ILNOM Continuous load current TAMB = 70°C 4 A
IOUT(standby) Output leakage current VBB = 13.5 V, TJ = 25°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 0.01 0.5 µA
VBB = 13.5 V, TJ = 125°C
VEN = VDIA_EN = 0 V, VOUT = 0 V		 1.5 µA
IDIA Current consumption in diagnostic mode VBB = 13.5 V, ISNS = 0 mA
VEN = 0 V, VDIA_EN = 5 V, VOUT = 0V		 3 6 mA
IQ Quiescent current VBB = 13.5 V
VEN = VDIA_EN = 5 V, IOUT = 0 A		 3 6 mA
tSTBY Standby mode delay time VEN = VDIA_EN = 0 V to standby 12 17 22 ms
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET and package)		 TJ = 25°C, 6 V ≤ VBB ≤ 28 V 50 mΩ
TJ = 150°C, 6 V ≤ VBB ≤ 28 V 100 mΩ
TJ = 25°C, 3 V ≤ VBB ≤ 6 V 75 mΩ
RON(REV) On-resistance during reverse polarity TJ = 25°C, –18 V ≤ VBB ≤ –8 V 50 mΩ
TJ = 105°C, –18 V ≤ VBB ≤ –8 V 115 mΩ
CURRENT SENSE CHARACTERISTICS
KSNS Current sense ratio
IOUT / ISNS 		IOUT = 1 A 1500
ISNSI Current sense current and accuracy VEN = VDIA_EN = 5 V, VSEL1 = 0 V IOUT = 3 A 2.000 mA
–4 4 %
IOUT = 1 A 0.667 mA
–4 4 %
IOUT = 300 mA 0.2 mA
–4 4 %
IOUT = 100 mA 0.067 mA
–6 6 %
IOUT = 50 mA 0.034 mA
–10 10 %
IOUT = 20 mA 0.014 mA
–20 20 %
TJ SENSE CHARACTERISTICS
ISNST Temperature sense current VDIA_EN = 5 V, VSEL1 = 5 V TJ = –40°C 0.00 0.12 0.38 mA
TJ = 25°C 0.72 0.85 0.98 mA
TJ = 85°C 1.25 1.52 1.79 mA
TJ = 125°C 1.61 1.96 2.31 mA
TJ = 150°C 1.80 2.25 2.70 mA
dISNST/dT Coefficient 0.0112 mA/°C
SNS CHARACTERISTICS
ISNSFH ISNS fault high-level VDIA_EN = 5 V, VSEL1 = 0 V 4 4.5 5.3 mA
ISNSleak ISNS leakage VDIA_EN = 0 V 1 µA
CURRENT LIMIT CHARACTERISTICS
VSC Short Circuit Maximum Supply Voltage Version A 18 V
Version B 18 V
ICL Current limit threshold Device Version A, TJ = –40°C to 150°C RILIM = GND, open, or out of range   14   A
RILIM = 5 kΩ 8.32 10 12.62 A
RILIM = 25 kΩ 1.325 2 3.2 A
Device Version B, TJ = –40°C to 150°C RILIM = GND, open, or out of range 26 A
RILIM = 5 kΩ 14.97 18 22.72 A
RILIM = 25 kΩ 2.7 3.6 4.5 A
KCL Current Limit Ratio Version A 50 A * kΩ
Version B 90 A * kΩ
FAULT CHARACTERISTICS
VOL Open-load (OL) detection voltage VEN = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V 2 3 4 V
tOL1 OL and STB indication-time from EN falling VEN = 5 V to 0 V, VDIA_EN = 5 V, VSEL1 = 0 V
IOUT = 0 mA, VOUT = 4 V		 300 500 700 µs
tOL2 OL and STB indication-time from DIA_EN rising VEN = 0 V, VDIA_EN = 0 V to 5 V, VSEL1 = 0 V
IOUT = 0 mA, VOUT = 4 V		 2 20 50 µs
tOL3 OL and STB indication-time from VOUT rising VEN = 0 V, VDIA_EN = 5 V, VSEL1 = 0 V 
IOUT = 0 mA, VOUT = 0 V to 4 V		 2 20 50 µs
TABS Thermal shutdown 150 °C
TREL Relative thermal shutdown 60 °C
THYS Thermal shutdown hysteresis 20 25 30 °C
tFAULT Fault shutdown indication-time VDIA_EN = 5 V
Time between switch shutdown and ISNS settling at ISNSFH 		50 µs
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown or current limit). 1 2 3 ms
EN PIN CHARACTERISTICS
VIL, EN Input voltage low-level No GND network diode 0.8 V
VIH, EN Input voltage high-level No GND network diode 2.0 V
VIHYS, EN Input voltage hysteresis 350 mV
REN Internal pulldown resistor 0.5 1 2 MΩ
IIL, EN Input current low-level VEN = 0.8 V 0.8 µA
IIH, EN Input current high-level VEN = 5 V 5.0 µA
DIA_EN PIN CHARACTERISTICS
VIL, DIA_EN Input voltage low-level No GND network diode 0.8 V
VIH, DIA_EN Input voltage high-level No GND network diode 2.0 V
VIHYS, DIA_EN Input voltage hysteresis 350 mV
RDIA_EN Internal pulldown resistor 0.5 1 2 MΩ
IIL, DIA_EN Input current low-level VDIA_EN = 0.8 V 0.8 µA
IIH, DIA_EN Input current high-level VDIA_EN = 5 V 5.0 µA
SEL1 PIN CHARACTERISTICS
VIL, SEL1 Input voltage low-level No GND network diode 0.8 V
VIH, SEL1 Input voltage high-level No GND network diode 2.0 V
VIHYS, SEL1 Input voltage hysteresis 350 mV
RSEL1 Internal pulldown resistor 0.5 1 2 MΩ
IIL, SEL1 Input current low-level VSEL1 = 0.8 V 0.8 µA
IIH, SEL1 Input current high-level VSEL1 = 5 V 5.0 µA
LATCH PIN CHARACTERISTICS
VIL, LATCH Input voltage low-level No GND network diode 0.8 V
VIH, LATCH Input voltage high-level No GND network diode 2.0 V
VIHYS, LATCH Input voltage hysteresis 350 mV
RLATCH Internal pulldown resistor 0.5 1 2 MΩ
IIL, LATCH Input current low-level VLATCH = 0.8 V 0.8 µA
IIH, LATCH Input current high-level VLATCH = 5 V 5.0 µA
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