ZHCSLK6A July   2021  – December 2021 TPS1HC100-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Full Protections and Diagnostics
        1. 8.3.4.1  Short-Circuit and Overload Protection
        2. 8.3.4.2  Open-Load and Short-to-Battery Detection
        3. 8.3.4.3  Short-to-Battery Detection
        4. 8.3.4.4  Reverse-Polarity and Battery Protection
        5. 8.3.4.5  Latch-Off Mode
        6. 8.3.4.6  Thermal Protection Behavior
        7. 8.3.4.7  UVLO Protection
        8. 8.3.4.8  Loss of GND Protection
        9. 8.3.4.9  Loss of Power Supply Protection
        10. 8.3.4.10 Reverse Current Protection
        11. 8.3.4.11 Protection for MCU I/Os
      5. 8.3.5 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
        2. 9.2.2.2 AEC Q100-012 Test Grade A Certification
        3. 9.2.2.3 EMC Transient Disturbances Test
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
      1. 11.2.1 Without a GND Network
      2. 11.2.2 With a GND Network
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PWP|14
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical Characteristics

All the following data are based on the mean value of the three lots samples, VVBB = 13.5 V if not specified.

Figure 6-1 Transient Thermal Impedance
VOUT = 0 V VEN = 0 V VDIAG_EN = 0 V
VBB Varied
Figure 6-3 Output Leakage Current IOUT,STBY vs Temperature
IOUT = 0 A VEN = 0 V VDIAG_EN = 5 V
VBB Varied
Figure 6-5 Diagnostic Current IDIA vs Temperature
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 6-7 RDSON vs VBB
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V
Figure 6-9 KCL vs Temperature
IOUT = 1A VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-11 KSNS Error vs VBB
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-13 VSNSFH (5 V) vs VBB
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-15 Turn off time TOFF vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-17 Falling Slew Rate SRF vs Temperature
ROUT = 1 kΩ VEN = 3.3 to 0 V VDIAG_EN = 3.3 to 0 V
VBB varied RSNS = 1 kΩ
Figure 6-19 VIL vs Temperature
GUID-20211201-SS0I-XBLX-QJXQ-8VHNKMWFKPFJ-low.png
ROUT = 10 Ω VEN = 5 to 0 V VDIAG_EN = 0 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 6-21 Turn-off Time (tOFF)
GUID-20211201-SS0I-ZRXV-NP3X-FWNKB0DXB5DD-low.png
ROUT = 5 μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = GND
Figure 6-23 Short Circuit With ILIM Shorted to Ground
GUID-20211201-SS0I-BBJD-HFMC-ZS4LJG8TKGGR-low.png
ROUT = 470 μF and 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = open
Figure 6-25 470-μF Capacitive Load Driving
VOUT = 0 V VEN = 0 V VDIAG_EN = 0 V
VBB Varied
Figure 6-2 Standby Current ISB vs. Temperature
IOUT = 0 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 6-4 Quiescent Current IQ vs Temperature
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 6-6 RDSON vs Temperature
IOUT = 1 A VEN = 5 V VDIAG_EN = 5 V
VBB Varied
Figure 6-8 RONREV vs Temperature
ROUT varied VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 6-10 KSNS Error vs Temperature
ROUT = 5μH and 100 mΩ VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-12 VSNSFH (3.3 V) vs VBB
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-14 Turn on time TON vs Temperature
ROUT = 10 Ω VEN = 5 V VDIAG_EN = 5 V
VBB varied RSNS = 1 kΩ
Figure 6-16 Rising Slew Rate SRR vs Temperature
ROUT = 1 kΩ VEN = 0 to 3.3 V VDIAG_EN = 0 to 3.3 V
VBB varied RSNS = 1 kΩ
Figure 6-18 VIH vs Temperature
GUID-20211201-SS0I-VCVZ-FKWG-X2ZXMQWFHZDQ-low.png
ROUT = 10 Ω VEN = 0 to 5 V VDIAG_EN = 0 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 6-20 Turn-on Time (tON)
GUID-20211201-SS0I-XBJV-RHLS-R0KQ4PHBSSBH-low.png
IOUT = 500 mA to 3 A VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ
Figure 6-22 ISNS Settling Time (tSNSION) on Load Step
GUID-20211201-SS0I-3HFL-KCLS-ZT8HZHPRFGG0-low.png
ROUT = 5 mH VEN = 5 V VDIAG_EN = 5 V
VBB = 13.5 V RSNS = 1 kΩ RILIM = GND
Figure 6-24 5mH Inductive Load Driving