ZHCSP75A July   2022  – December 2022 TPS1HC30-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 建议运行条件
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Full Protections and Diagnostics
        1. 8.3.4.1  Short-Circuit and Overload Protection
        2. 8.3.4.2  Open-Load and Short-to-Battery Detection
        3. 8.3.4.3  Short-to-Battery Detection
        4. 8.3.4.4  Reverse-Polarity and Battery Protection
        5. 8.3.4.5  Latch-Off Mode
        6. 8.3.4.6  Thermal Protection Behavior
        7. 8.3.4.7  UVLO Protection
        8. 8.3.4.8  Loss of GND Protection
        9. 8.3.4.9  Loss of Power Supply Protection
        10. 8.3.4.10 Reverse Current Protection
        11. 8.3.4.11 Protection for MCU I/Os
      5. 8.3.5 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
        2. 9.2.2.2 EMC Transient Disturbances Test
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.6 SNS Timing Characteristics

VBB = 6 V to 18 V, TJ = –40°C to +150°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SNS TIMING - CURRENT SENSE
tSNSION1 Settling time from rising edge of DIA_EN
50% of VDIA_EN to 90% of settled ISNS		 VENx= 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, IL = 1A		 30 µs
VEN = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, IL = 30 mA		 30 µs
tSNSION2 Settling time from rising edge of EN and DIA_EN
50% of VDIA_EN  VEN to 90% of settled ISNS		 VEN = VDIA_EN = 0 V to 5 V
VBB = 13.5 V RSNS = 1 kΩ, RLOAD = 10 Ω		 150 µs
tSNSION3 Settling time from rising edge of EN with DIA_EN HI;
50% of VDIA_EN  VEN to 90% of settled ISNS		 VEN = 0 V to 5 V, VDIA_EN = 5 V VBB = 13.5 V
RSNS = 1 kΩ, RLOAD = 10 Ω		 150 µs
tSNSIOFF Settling time from falling edge of DIA_EN VEN = 5 V, VDIA_EN = 5 V to 0 V  VBB = 13.5 V
RSNS = 1 kΩ, RL = 10 Ω		 20 µs
tSETTLEH Settling time from rising edge of load step VEN = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 0.5 A to 3 A 		 20 µs
tSETTLEL Settling time from falling edge of load step VEN = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 3 A to 0.5 A		 20 µs
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