米6体育平台手机版

ZHCSLT0D November 2007 – October 2020 TPS2041B-Q1 , TPS2042B-Q1 , TPS2051B-Q1

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DBV|5
- MPDS018T

散热焊盘机械数据 (封装 | 引脚)

订购信息

6.5 Electrical Characteristics

over recommended operating junction temperature range, V_I(IN) = 5.5 V, I_O = 0.5 A, V_I(
ENx) = 0 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS⁽¹⁾			MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(ON)	Static drain-source on-state resistance, 5‑V or 3.3-V operation	V_I(IN) = 5 V or 3.3 V, I_O = 0.5 A	–40°C ≤ T_J ≤ 125°C			105	160	mΩ
r_DS(ON)	Static drain-source on-state resistance, 2.7-V operation⁽²⁾	V_I(IN) = 2.7 V, I_O = 0.5 A	–40°C ≤ T_J ≤ 125°C			110	175	mΩ
t_r	Rise time, output⁽²⁾	V_I(IN) = 5.5 V	C_L = 1 µF, R_L = 10 Ω	T_J = 25°C		0.6	1.5	ms
t_r	Rise time, output⁽²⁾	V_I(IN) = 2.7 V	C_L = 1 µF, R_L = 10 Ω	T_J = 25°C		0.4	1	ms
t_f	Fall time, output⁽²⁾	V_I(IN) = 5.5 V	C_L = 1 µF, R_L = 10 Ω	T_J = 25°C	0.05		0.5	ms
t_f	Fall time, output⁽²⁾	V_I(IN) = 2.7 V	C_L = 1 µF, R_L = 10 Ω	T_J = 25°C	0.05		0.5	ms
ENABLE INPUT ( EN, ENx)
V_IH	High-level input voltage	2.7 V ≤ V_I(IN) ≤ 5.5 V			2			V
V_IL	Low-level input voltage	2.7 V ≤ V_I(IN) ≤ 5.5 V					0.8	V
I_I	Input current	V_I( ENx) = 0 V or 5.5 V			–0.5		0.5	µA
t_on	Turnon time⁽²⁾	C_L = 100 µF, R_L = 10 Ω					3	ms
t_off	Turnoff time⁽²⁾	C_L = 100 µF, R_L = 10 Ω					10	ms
CURRENT LIMIT
I_OS	Short-circuit output current	V_I(IN) = 5 V, OUT connected to GND, device enabled into short-circuit		T_J = 25°C	0.65	1	1.25	A
I_OS	Short-circuit output current			–40°C ≤ T_J ≤ 125°C	0.6	1	1.3	A
SUPPLY CURRENT (TPS2041B-Q1, TPS2051B-Q1)
	Supply current, low-level output	No load on OUT, V_I( EN) = 5.5 V or V_I(EN) = 0 V		T_J = 25°C		0.5	1	µA
	Supply current, low-level output	No load on OUT, V_I( EN) = 5.5 V or V_I(EN) = 0 V		–40°C ≤ T_J ≤ 125°C		0.5	5	µA
	Supply current, high-level output	No load on OUT, V_I( EN) = 0 V or V_I(EN) = 5.5 V		T_J = 25°C		43	60	µA
	Supply current, high-level output	No load on OUT, V_I( EN) = 0 V or V_I(EN) = 5.5 V		–40°C ≤ T_J ≤ 125°C		43	70	µA
	Leakage current	OUT connected to ground, V_I( EN) = 5.5 V or V_I(EN) = 0 V		–40°C ≤ T_J ≤ 125°C		1		µA
	Reverse leakage current	V_I(OUTx) = 5.5 V, IN = ground⁽²⁾		T_J = 25°C		0		µA
SUPPLY CURRENT (TPS2042B-Q1)
	Supply current, low-level output	No load on OUT, V_I( ENx) = 5.5 V		T_J = 25°C		0.5	1	µA
	Supply current, low-level output	No load on OUT, V_I( ENx) = 5.5 V		–40°C ≤ T_J ≤ 125°C		0.5	5	µA
	Supply current, high-level output	No load on OUT, V_I( ENx) = 0 V		T_J = 25°C		50	70	µA
	Supply current, high-level output	No load on OUT, V_I( ENx) = 0 V		–40°C ≤ T_J ≤ 125°C		50	90	µA
	Leakage current	OUT connected to ground, V_I( ENx) = 5.5 V		–40°C ≤ T_J ≤ 125°C		1		µA
	Reverse leakage current	V_I(OUTx) = 5.5 V, IN = ground⁽²⁾		T_J = 25°C		0.2		µA
UNDERVOLTAGE LOCKOUT
	Low-level input voltage, IN, INx				2		2.5	V
	Hysteresis, IN, INx			T_J = 25°C		75		mV
OVERCURRENT ( OC, OCx)
	Output low voltage, V_OL( OCx)	I_O( OCx) = 5 mA					0.4	V
	OFF-state current⁽²⁾	V_O( OCx) = 5 V or 3.3 V					1	µA
	OC deglitch⁽²⁾	OCx assertion or deassertion			4	8	15	ms
THERMAL SHUTDOWN⁽³⁾
	Thermal shutdown threshold⁽²⁾				135			°C
	Recovery from thermal shutdown⁽²⁾				125			°C
	Hysteresis⁽²⁾					10		°C

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be accounted for separately.

(2) Specified by design.

(3) The thermal shutdown only reacts under overcurrent conditions.