ZHCSSK0P April   2004  – August 2024 TPS2041B , TPS2042B , TPS2043B , TPS2044B , TPS2051B , TPS2052B , TPS2053B , TPS2054B

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. General Switch Catalog
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics (All Devices Excluding TPS2051BDBV and TPS2052BD)
    7. 6.7 Typical Characteristics (TPS2051BDBV and TPS2052BD)
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1  Power Switch
      2. 8.3.2  Charge Pump
      3. 8.3.3  Driver
      4. 8.3.4  Enable ( ENx)
      5. 8.3.5  Enable (ENx)
      6. 8.3.6  Current Sense
      7. 8.3.7  Overcurrent
        1. 8.3.7.1 Overcurrent Conditions (TPS20x3BD, TPS20x4BD, and TPS20x2BDRB)
        2. 8.3.7.2 Overcurrent Conditions (TPS20x1B & TPS20x2B in D, DGN, and DBV packages)
      8. 8.3.8  Overcurrent ( OCx)
      9. 8.3.9  Thermal Sense
      10. 8.3.10 Undervoltage Lockout
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Universal Serial Bus (USB) Applications
    2. 9.2 Typical Application
      1. 9.2.1 Typical Application (TPS2042B)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Power-Supply Considerations
          2. 9.2.1.2.2 OC Response
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Host and Self-Powered and Bus-Powered Hubs
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 USB Power-Distribution Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Low-Power Bus-Powered and High-Power Bus-Powered Functions
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Generic Hot-Plug Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
    1. 10.1 Undervoltage Lockout (UVLO)
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation
    4. 11.4 Thermal Protection
  13. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 静电放电警告
    5. 12.5 术语表
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Design Procedure

To begin the design process a few parameters must be decided upon. The designer needs to know the following:

  • Normal Input Operation Voltage
  • Current Limit

Input and output capacitance improves the performance of the device; the actual capacitance must be optimized for the particular application. For all applications, TI recommends a 0.1-µF or greater ceramic bypass capacitor between IN and GND, as close to the device as possible for local noise decoupling. This precaution reduces ringing on the input due to power-supply transients. Additional input capacitance may be needed on the input to reduce voltage undershoot from exceeding the UVLO of other load share one power rail with TPS2042 device or overshoot from exceeding the absolute-maximum voltage of the device during heavy transient conditions. Preventing voltage undershoots and overshoots is especially important during bench testing when long, inductive cables are used to connect the evaluation board to the bench power supply. Output capacitance is not required, but TI recommends placing a high-value electrolytic capacitor on the output pin when large transient currents are expected on the output to reduce the undershoot, which is caused by the inductance of the output power bus just after a short has occurred and the TPS2042 device has abruptly reduced OUT current. Energy stored in the inductance drives the OUT voltage down and potentially negative as it discharges.