SLVS832D November   2008  – July 2014 TPS22941 , TPS22942 , TPS22943 , TPS22944 , TPS22945

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Fault Reporting
      2. 8.3.2 Current Limiting
      3. 8.3.3 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 On/Off Control
      2. 9.1.2 Undervoltage Lockout
      3. 9.1.3 Reverse Voltage
      4. 9.1.4 Input Capacitor
      5. 9.1.5 Output Capacitor
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VIN to VOUT Voltage Drop
        2. 9.2.2.2 Maximum Output Capacitance
        3. 9.2.2.3 Power Dissipation
        4. 9.2.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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11 Layout

11.1 Layout Guidelines

  • For best performance, all traces should be as short as possible.
  • To be most effective, the input and output capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have on normal and short-circuit operation.
  • The VIN terminal should be bypassed to grond with low ESR ceramic bypass capacitors. The typical recommended bypass capacitance is 1-µF ceramic with X5R or X7R dielectric. This capacitor should be placed as close to the device terminals as possible.
  • The VOUT terminal should be bypassed to grond with low ESR ceramic bypass capacitors. The typical recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric. This capacitor should be placed as close to the device terminals as possible.
  • Using wide traces for VIN, VOUT, and GND will help minimize parasitic electrical effects along with minimizing the case to ambient thermal impedance.

11.2 Layout Example

layout_new_SLVS832.gif

11.3 Thermal Considerations

The maximum junction temperature will be internally limited by the thermal shutdown (TSD). To calculate the maximum allowable dissipation, PD(MAX) for a given ambient temperature, use Equation 5.

Equation 5. EQ3.gif

where

  • PD(MAX) = maximum allowable power dissipation
  • TSD = thermal shutdown threshold (140 °C typical)
  • TA = ambient temperature of the device
  • θJA = junction to air thermal impedance. See the section. This parameter is highly dependent upon board layout.