ZHCSPO5A September   2022  – December 2022 TPS22950-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Limiting
        1. 8.3.1.1 Adjusting the Current Limit
      2. 8.3.2 Reverse Current Blocking (RCB)
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 术语表
  11. 11Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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Overview

The TPS22950-Q1 is a single channel load switch with a 34-mΩ power MOSFET capable of driving loads up to 2.7 A. While on, the device provides protection against fault cases through its adjustable output current limiting and thermal shutdown. The TPS22950-Q1 responds to overcurrent events with auto-retry behavior. The TPS22950 also provides reverse current blocking for when VOUT exceeds VIN. The switch ON state is controlled by a digital input that is capable of interfacing directly with low-voltage control signals, and a smart pulldown is used to keep the ON pin from floating until system sequencing is complete. When the device is turned off, quick output discharge is enabled, pulling the output voltage down to 0 V through a resistive path to GND.