TPS22965 5.7V，6A，16mΩ 导通电阻负载开关
- ZHCSA62B August 2012 – August 2014 TPS22965
  
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TPS22965 5.7V，6A，16mΩ 导通电阻负载开关

本资源的原文使用英文撰写。为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

集成单通道负载开关
输入电压范围：0.8V 至 5.7V
超低导通电阻 (R_ON)
- V_输入 = 5V（V_偏置 = 5V）时，R_导通 = 16mΩ
- V_输入 = 3.6V（V_偏置 = 5V）时，R_导通 = 16mΩ
- V_输入 = 1.8V（V_偏置 = 5V）时，R_导通 = 16mΩ
6A 最大持续开关电流
低静态电流 (50µA)
低控制输入阀值支持使用
1.2V，1.8V，2.5V 和 3.3V 逻辑电路
可配置的上升时间
快速输出放电 (QOD)
带有散热垫的小外形尺寸无引线 (SON) 8 引脚封装
根据 JESD 22 测试得出的静电放电 (ESD) 性能
- 2000V 人体模型 (HBM) 和 1000V 充电器件模型 (CDM)

2 应用范围

Ultrabook™
笔记本电脑/上网本
平板电脑
消费类电子米6体育平台手机版_好二三四
机顶盒/家庭网关
电信系统
固态硬盘 (SSD)

3 说明

TPS22965 是一款单通道负载开关，可提供可配置的上升时间来尽量减小浪涌电流。此器件包括一个 N 通道金属氧化物半导体场效应晶体管 (MOSFET)，可在 0.8V 至 5.7V 的输入电压范围内运行并可支持 6A 的最大持续电流。此开关由一个开/关输入 (ON) 控制，此输入能够直接连接低电压控制信号。在 TPS22965 中，为了实现开关关闭时的快速输出放电，增加了一个 225Ω 的片上负载电阻器。

TPS22965 采用小型，节省空间的 2.00mm x 2.00mm 8 引脚 SON 封装 (DSG)，且带有集成散热焊盘，支持较高功耗。器件在自然通风环境下的额定运行温度范围为 -40°C 至 85°C。

器件信息⁽¹⁾

部件号	封装	封装尺寸（标称值）
TPS22965	DSG (8)	2.00mm x 2.00mm

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

4 简化电路原理图

5 修订历史记录

Changes from A Revision (August 2013) to B Revision

Changed 已将此数据表更改为新的模板布局。Go
添加了器件信息表。 Go
Added Handling Ratings table. Go
Changed MAX value of "V_IN" from 5.5 V to 5.7 V. Go
Changed MAX value of "V_BIAS" from 5.5 V to 5.7 V. Go
Changed MAX value of "V_ON" from 5.5 V to 5.7 V.Go
Added Thermal Information table. Go
Added Detailed Description Section. Go
Added Application and Implementation section. Go
Added Power Supply Recommendations section. Go
Added Layout section. Go

Changes from * Revision (August 2012) to A Revision

Updated VON MAX value to fix typo that restricted operating range. Changed MAX value from "VIN" to "5.5" to align with rest of document. Go

6 Pin Configuration and Functions

DSG PACKAGE

Pin Functions

PIN		I/O	DESCRIPTION
NAME	DSG	I/O	DESCRIPTION
CT	6	O	Switch slew rate control. Can be left floating. See Application Information section for more information.
GND	5	–	Device ground.
ON	3	I	Active high switch control input. Do not leave floating.
Thermal Pad	–	–	Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Example section for layout guidelines.
VBIAS	4	I	Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5V to 5.7V. See Application and Implementation section for more information.
VIN	1, 2	I	Switch input. Input bypass capacitor recommended for minimizing V_IN dip. Must be connected to Pin 1 and Pin 2. See Application and Implementation section for more information.
VOUT	7, 8	O	Switch output.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
V_IN	Input voltage range	–0.3	6	V
V_OUT	Output voltage range	–0.3	6	V
V_BIAS	Bias voltage range	–0.3	6	V
V_ON	Input voltage range	–0.3	6	V
I_MAX	Maximum continuous switch current		6	A
I_PLS	Maximum pulsed switch current, pulse <300 µs, 2% duty cycle		8	A
T_J	Maximum junction temperature		125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

7.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–2000	2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–1000	1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN	Input voltage range		0.8	V_BIAS	V
V_BIAS	Bias voltage range		2.5	5.7	V
V_ON	ON voltage range		0	5.7	V
V_OUT	Output voltage range			V_IN	V
V_IH	High-level input voltage, ON	V_BIAS = 2.5 V to 5.7 V	1.2	5.7	V
V_IL	Low-level input voltage, ON	V_BIAS = 2.5 V to 5.7 V	0	0.5	V
C_IN	Input capacitor		1⁽²⁾		µF
T_A	Operating free-air temperature range⁽¹⁾		–40	85	°C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A_(max) = T_J(max) – (θ_JA × P_D(max))

(2) Refer to Application Information section.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS22965	UNIT
THERMAL METRIC⁽¹⁾		DSG (8 PINS)	UNIT
R_θJA	Junction-to-ambient thermal resistance	65.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	74.2
R_θJB	Junction-to-board thermal resistance	35.4
ψ_JT	Junction-to-top characterization parameter	2.2
ψ_JB	Junction-to-board characterization parameter	36.0
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	12.8

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics, V_BIAS = 5.0 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ T_A ≤ 85 °C (Full) and V_BIAS = 5.0 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_IN(VBIAS-ON)	V_BIASquiescent current	I_OUT = 0 mA, V_IN = V_ON = V_BIAS = 5.0 V		Full	50	75	µA
I_{IN(VBIAS-OFF)}	V_BIAS shutdown current	V_ON = GND, V_OUT = 0 V		Full		2	µA
I_IN(VIN-OFF)	V_IN off-state supply current	V_ON = GND, V_OUT = 0 V	V_IN = 5.0 V	Full	0.2	8	µA
			V_IN = 3.3 V		0.02	3
			V_IN = 1.8 V		0.01	2
			V_IN = 0.8 V		0.005	1
I_ON	ON pin input leakage current	V_ON = 5.5 V		Full		0.5	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA, V_BIAS = 5.0 V	V_IN = 5.0 V	25°C	16	23	mΩ
			V_IN = 5.0 V	Full		25	mΩ
			V_IN = 3.3 V	25°C	16	23	mΩ
			V_IN = 3.3 V	Full		25	mΩ
			V_IN = 1.8 V	25°C	16	23	mΩ
			V_IN = 1.8 V	Full		25	mΩ
			V_IN = 1.5 V	25°C	16	23	mΩ
			V_IN = 1.5 V	Full		25	mΩ
			V_IN = 1.2 V	25°C	16	23	mΩ
			V_IN = 1.2 V	Full		25	mΩ
			V_IN = 0.8 V	25°C	16	23	mΩ
			V_IN = 0.8 V	Full		25	mΩ
R_PD	Output pull-down resistance	V_IN = 5.0 V, V_ON = 0 V, I_OUT = 15 mA		Full	225	300	Ω

7.6 Electrical Characteristics, V_BIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40 °C ≤ T_A ≤ 85 °C (Full) and V_BIAS = 2.5 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_IN(VBIAS-ON)	V_BIASquiescent current	I_OUT = 0 mA, V_IN = V_ON = V_BIAS = 2.5 V		Full	20	30	µA
I_{IN(VBIAS-OFF)}	V_BIAS shutdown current	V_ON = GND, V_OUT = 0 V		Full		2	µA
I_IN(VIN-OFF)	V_IN off-state supply current	V_ON = GND, V_OUT = 0 V	V_IN = 2.5 V	Full	0.01	3	µA
			V_IN = 1.8 V		0.01	2
			V_IN = 1.2 V		0.005	2
			V_IN = 0.8 V		0.003	1
I_ON	ON pin input leakage current	V_ON = 5.5 V		Full		0.5	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA, V_BIAS = 2.5 V	V_IN = 2.5 V	25°C	20	26	mΩ
			V_IN = 2.5 V	Full		28	mΩ
			V_IN = 1.8 V	25°C	19	26	mΩ
			V_IN = 1.8 V	Full		28	mΩ
			V_IN = 1.5 V	25°C	18	25	mΩ
			V_IN = 1.5 V	Full		27	mΩ
			V_IN = 1.2 V	25°C	18	25	mΩ
			V_IN = 1.2 V	Full		27	mΩ
			V_IN = 0.8 V	25°C	17	25	mΩ
			V_IN = 0.8 V	Full		27	mΩ
R_PD	Output pull-down resistance	V_IN = 2.5 V, V_ON = 0 V, I_OUT = 1 mA		Full	275	325	Ω

7.7 Switching Characteristics

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = V_ON = V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turn-on time	R_L= 10 Ω, C_L = 0.1 µF, C_T = 1000 pF	1325	µs
t_OFF	Turn-off time		10
t_R	V_OUT rise time		1625
t_F	V_OUT fall time		3.5
t_D	ON delay time		500
V_IN = 0.8 V, V_ON = V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turn-on time	R_L= 10 Ω, C_L = 0.1 µF, C_T = 1000 pF	600	µs
t_OFF	Turn-off time		80
t_R	V_OUT rise time		300
t_F	V_OUT fall time		5.5
t_D	ON delay time		460
V_IN = 2.5V, V_ON = 5 V, V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turn-on time	R_L= 10 Ω, C_L = 0.1 µF, C_T = 1000 pF	2200	µs
t_OFF	Turn-off time		9
t_R	V_OUT rise time		2275
t_F	V_OUT fall time		3.1
t_D	ON delay time		1075
V_IN = 0.8 V, V_ON = 5 V, V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turn-on time	R_L= 10 Ω, C_L = 0.1 µF, C_T = 1000 pF	1450	µs
t_OFF	Turn-off time		60
t_R	V_OUT rise time		875
t_F	V_OUT fall time		5.5
t_D	ON delay time		1010

A. Rise and fall times of the control signal is 100 ns.

Figure 1. Test Circuit

Figure 2. t_ON/t_OFF Waveforms

7.8 Typical Characteristics

V_IN = V_BIAS

V_ON = 5 V

V_OUT = Open

Figure 3. Quiescent Current vs V_BIAS

V_BIAS = 5.5 V

V_ON = 0 V

V_OUT = 0 V

Figure 5. Off-state VIN Current vs V_IN

V_BIAS = 5.5 V

I_OUT = –200 mA

Figure 7. R_ON vs Temperature

V_BIAS = 5.5 V

I_OUT = –200 mA

Figure 9. R_ON vs V_IN

V_BIAS = 5.5 V

V_ON = 0 V

IPD = 1 mA

Figure 11. R_PD vs V_IN

V_BIAS = 2.5 V

CT = 1 nF

Figure 13. t_D vs V_IN

V_BIAS = 2.5 V

CT = 1 nF

Figure 15. t_F vs V_IN

V_BIAS = 2.5 V

CT = 1 nF

Figure 17. t_OFF vs V_IN

V_BIAS = 2.5 V

CT = 1 nF

Figure 19. t_ON vs V_IN

V_BIAS = 2.5 V

CT = 1 nF

Figure 21. t_R vs V_IN

V_IN = 2.5 V

CT = 1 nF

Figure 23. t_R vs V_BIAS

V_IN = V_BIAS

V_ON = 0 V

V_OUT = 0 V

Figure 4. Shutdown Current v. V_BIAS

V_BIAS = 2.5 V

I_OUT = –200 mA

Figure 6. R_ON vs Temperature

V_BIAS = 2.5 V

I_OUT = –200 mA

Figure 8. R_ON vs V_IN

T_A = 25 °C

I_OUT = –200 mA

Figure 10. R_ON vs V_IN

T_A = 25 °C

V_IN = 2 V

Figure 12. V_OUT vs V_ON

V_BIAS = 5.5 V

CT = 1 nF

Figure 14. t_D vs V_IN

V_BIAS = 5.5 V

CT = 1 nF

Figure 16. t_F vs V_IN

V_BIAS = 5.5 V

CT = 1 nF

Figure 18. t_OFF vs V_IN

V_BIAS = 5.5 V

CT = 1 nF

Figure 20. t_ON vs V_IN

V_BIAS = 5.5 V

CT = 1 nF

Figure 22. t_R vs V_IN

7.9 Typical Switching Characteristics

T_A = 25 °C, C_T = 1 nF, C_IN = 1 µF, C_L = 0.1 µF, R_L = 10 Ω, CH1 = V_OUT, CH2 = V_ON

V_IN = 0.8 V	V_BIAS = 2.5 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω

Figure 24. Turn-on Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V	C_IN = 1 µF,
C_L = 0.1 µF	R_L = 10 Ω

Figure 26. Turn-on Response Time

V_IN = 0.8 V	V_BIAS = 2.5 V	C_IN = 1 µF
C_L = 0.1 µF	R_L= 10 Ω

Figure 28. Turn-off Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω

Figure 30. Turn-off Response Time

V_IN = 0.8 V	V_BIAS = 5.0 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω

Figure 25. Turn-on Response Time

V_IN = 5.0 V	V_BIAS = 5.0 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω

Figure 27. Turn-off Response Time

V_IN = 0.8 V	V_BIAS = 5.0 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω

Figure 29. Turn-on Response Time

V_IN = 5.0 V	V_BIAS = 5.0 V	C_IN = 1 µF
C_L = 0.1 µF	R_L = 10 Ω)

Figure 31. Turn-off Response Time

8 Detailed Description

8.1 Overview

The device is a single channel, 6-A load switch in an 8-terminal SON package. To reduce the voltage drop in high current rails, the device implements an ultra-low resistance N-channel MOSFET. The device has a programmable slew rate for applications that require specific rise-time.

The device has very low leakage current during off state. This prevents downstream circuits from pulling high standby current from the supply. Integrated control logic, driver, power supply, and output discharge FET eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.

8.2 Functional Block Diagram

8.3 Feature Description

8.3.1 Adjustable Rise Time

A capacitor to GND on the CT terminal sets the slew rate. The voltage on the CT terminal can be as high as 12 V. Therefore, the minimum voltage rating for the CT cap should be 25 V for optimal performance. An approximate formula for the relationship between CT and slew rate when V_BIAS is set to 5 V is shown in Equation 1 below. This equation accounts for 10% to 90% measurement on V_OUT and does NOT apply for CT = 0 pF. Use table below to determine rise times for when CT = 0 pF.

Equation 1.

Where,

SR = slew rate (in µs/V)
CT = the capacitance value on the CT terminal (in pF)
The units for the constant 13.4 are µs/V. The units for the constant 0.39 are µs/(V*pF).

Rise time can be calculated by multiplying the input voltage by the slew rate. The table below contains rise time values measured on a typical device. Rise times shown below are only valid for the power-up sequence where V_IN and V_BIAS are already in steady state condition before the ON terminal is asserted high.

Table 1. Rise Time vs CT Capacitor

CT (pF)	RISE TIME (µs) 10% - 90%, C_L = 0.1 µF, C_IN = 1 µF, R_L = 10 Ω, V_BIAS = 5 V TYPICAL VALUES at 25°C with a 25V X7R 10% CERAMIC CAPACITOR on CT
CT (pF)	VIN = 5 V	VIN = 3.3 V	VIN = 1.8 V	VIN = 1.5 V	VIN = 1.2 V	VIN = 1.05 V	VIN = 0.8 V
0	127	93	62	55	51	46	42
220	475	314	188	162	141	125	103
470	939	637	359	304	255	218	188
1000	1869	1229	684	567	476	414	344
2200	4020	2614	1469	1211	1024	876	681
4700	8690	5746	3167	2703	2139	1877	1568
10000	18360	12550	6849	5836	4782	4089	3449

8.3.2 Quick Output Discharge

The TPS22965 includes a Quick Output Discharge (QOD) feature. When the switch is disabled, a discharge resistor is connected between VOUT and GND. This resistor has a typical value of 225-Ω and prevents the output from floating while the switch is disabled.

8.3.3 Low Power Consumption During Off State

The I_SD V_IN supply current is 0.01-µA typical at 1.8-VIN. Typically, the downstream loads would have a significantly higher off-state leakage current. The load switch allows system standby power consumption to be reduced.

8.4 Device Functional Modes

Table 2. Functional Table

ON	VIN to VOUT	VOUT to GND
L	Off	On
H	On	Off