SLVSBH4F June   2012  – July 2016 TPS22966

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics—VBIAS = 5 V
    6. 6.6 Electrical Characteristics—VBIAS = 2.5 V
    7. 6.7 Switching Characteristics
    8. 6.8 Typical DC Characteristics
    9. 6.9 Typical AC Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ON and OFF Control
      2. 8.3.2 Input Capacitor (Optional)
      3. 8.3.3 Output Capacitor (Optional)
      4. 8.3.4 VIN and VBIAS Voltage Range
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Adjustable Rise Time
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT(2)
VIN1,2 Input voltage –0.3 6 V
VOUT1,2 Output voltage –0.3 6 V
VON1,2 ON-pin voltage –0.3 6 V
VBIAS VBIAS voltage –0.3 6 V
IMAX Maximum continuous switch current per channel 6 A
IPLS Maximum pulsed switch current per channel, pulse <300 µs, 2% duty cycle 8 A
TJ Maximum junction temperature 125 °C
TLEAD Maximum lead temperature (10-s soldering time) 300 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VIN1,2 Input voltage 0.8 VBIAS V
VBIAS Bias voltage 2.5 5.5 V
VON1,2 ON voltage 0 5.5 V
VOUT1,2 Output voltage VIN V
VIH High-level input voltage, ON VBIAS = 2.5 V to 5.5 V 1.2 5.5 V
VIL Low-level input voltage, ON VBIAS = 2.5 V to 5.5 V 0 0.5 V
CIN1,2 Input capacitor 1(2) µF
TA Operating free-air temperature (1) –40 105 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part-package in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max)).
(2) See the Input Capacitor (Optional) section.

6.4 Thermal Information

THERMAL METRIC (1) TPS22966 UNIT
DPU (WSON)
14 PINS
RθJA Junction-to-ambient thermal resistance 52.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45.9 °C/W
RθJB Junction-to-board thermal resistance 11.5 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 11.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specification in the following table applies where VBIAS = 5 V. Typical values are for TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IIN(VBIAS-ON) VBIAS quiescent current (both channels) IOUT1 = IOUT2 = 0 mA,
VIN1,2 = VON1,2 = VBIAS = 5 V
–40°C to +105°C 80 120 µA
IIN(VBIAS-ON) VBIAS quiescent current (single channel) IOUT1 = IOUT2 = 0 mA, VON2 = 0 V
VIN1,2 = VON1 = VBIAS = 5 V
–40°C to +105°C 60 120 µA
IIN(VBIAS-OFF) VBIAS shutdown current VON1,2 = 0 V, VOUT1,2 = 0 V –40°C to +105°C 2 µA
IIN(VIN-OFF) VIN1,2 off-state supply current (per channel) VON1,2 = 0 V,
VOUT1,2 = 0 V
VIN1,2 = 5 V –40°C to +105°C 0.5 8 µA
VIN1,2 = 3.3 V –40°C to +105°C 0.1 3
VIN1,2 = 1.8 V –40°C to +105°C 0.07 2
VIN1,2 = 0.8 V –40°C to +105°C 0.04 1
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 1 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance (per channel) IOUT = –200 mA,
VBIAS = 5 V
VIN = 5 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
VIN = 3.3 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
VIN = 1.8 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
VIN = 1.5 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
VIN = 1.2 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
VIN = 0.8 V 25°C 16 19
–40°C to +85°C 21
–40°C to +105°C 23
RPD Output pulldown resistance VIN = 5 V, VON = 0 V, IOUT = 15 mA –40°C to +85°C 220 300 Ω
–40°C to +105°C 330

6.6 Electrical Characteristics—VBIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies where VBIAS = 2.5 V. Typical values are for TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IIN(VBIAS-ON) VBIAS quiescent current (both channels) IOUT1 = IOUT2 = 0 mA,
VIN1,2 = VON1,2 = VBIAS = 2.5 V
–40°C to +85°C 32 37 µA
–40°C to +105°C 40
IIN(VBIAS-ON) VBIAS quiescent current (single channel) IOUT1 = IOUT2 = 0 mA, VON2 = 0 V
VIN1,2 = VON1 = VBIAS = 2.5 V
–40°C to +105°C 23 40 µA
IIN(VBIAS-OFF) VBIAS shutdown current VON1,2 = 0 V, VOUT1,2 = 0 V –40°C to +105°C 2 µA
IIN(VIN-OFF) VIN1,2 off-state supply current (per channel) VON1,2 = 0 V,
VOUT1,2 = 0 V
VIN1,2 = 2.5 V –40°C to +105°C 0.13 3 µA
VIN1,2 = 1.8 V –40°C to +105°C 0.07 2
VIN1,2 = 1.2 V –40°C to +105°C 0.05 2
VIN1,2 = 0.8 V –40°C to +105°C 0.04 1
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 1 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA,
VBIAS = 2.5 V
VIN = 2.5 V 25°C 21 24
–40°C to +85°C 27
–40°C to +105°C 29
VIN = 1.8 V 25°C 19 22
–40°C to +85°C 25
–40°C to +105°C 27
VIN = 1.5 V 25°C 18 21
–40°C to +85°C 24
–40°C to +105°C 26
VIN = 1.2 V 25°C 18 21
–40°C to +85°C 24
–40°C to +105°C 26
VIN = 0.8 V 25°C 17 20
–40°C to +85°C 23
–40°C to +105°C 25
RPD Output pulldown resistance VIN = 2.5 V, VON = 0 V, IOUT = 1 mA –40°C to +85°C 260 300 Ω
–40°C to +105°C 330

6.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1310 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 6
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1720
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 460
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 550 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 170
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 325
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 16
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 400
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2050 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 5
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2275
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2.5
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 990
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1300 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 130
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 875
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 16
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 870

6.8 Typical DC Characteristics

TPS22966 D001_SLVSBH4F.gif
VIN1 = VIN2 = VBIAS VON1= VON2 = 5 V VOUT = Open
Figure 1. Quiescent Current vs Bias Voltage
Both Channels
TPS22966 D003_SLVSBH4F.gif
VIN1 = VIN2 = VBIAS VON1= VON2 = 0 V VOUT = 0 V
Figure 3. Shutdown Current vs Bias Voltage
Both Channels
TPS22966 D005_SLVSBH4F.gif
VBIAS = 2.5 V IOUT = –200 mA
Figure 5. On-Resistance vs Temperature
Single Channel
TPS22966 D007_SLVSBH4F.gif
VBIAS = 2.5 V IOUT = –200 mA
Figure 7. On-Resistance vs Input Voltage
Single Channel
TPS22966 D009_SLVSBH4F.gif
TA = 25°C
Figure 9. On-Resistance vs Input Voltage
Single Channel
TPS22966 D011_SLVSBH4F.gif
TA = 25°C
Figure 11. Output Voltage vs ON Voltage
Single Channel
TPS22966 D013_SLVSBH4F.gif
VBIAS = 5 V CT = 1 nF
Figure 13. Delay Time vs Input Voltage
TPS22966 D015_SLVSBH4F.gif
VBIAS = 5 V CT = 1 nF
Figure 15. Fall Time vs Input Voltage
TPS22966 D017_SLVSBH4F.gif
VBIAS = 5 V CT = 1 nF
Figure 17. Turnoff Time vs Input Voltage
TPS22966 D019_SLVSBH4F.gif
VBIAS = 5 V CT = 1 nF
Figure 19. Turnon Time vs Input Voltage
TPS22966 D021_SLVSBH4F.gif
VBIAS = 5 V CT = 1 nF
Figure 21. Rise Time vs Input Voltage (VBIAS = 5 V, CT = 1 nF)
TPS22966 D002_SLVSBH4F.gif
VIN1 = VIN2 = VBIAS VON1= VON2 = 5 V VOUT = Open
Figure 2. Quiescent Current vs Bias Voltage
Single Channel
TPS22966 D004_SLVSBH4F.gif
VBIAS = 5 V VON = 0 V VOUT = 0 V
Figure 4. Off-State VIN Current vs Input Voltage
Single Channel
TPS22966 D006_SLVSBH4F.gif
VBIAS = 5 V IOUT = –200 mA
Figure 6. On-Resistance vs Temperature
Single Channel
TPS22966 D008_SLVSBH4F.gif
VBIAS = 5 V IOUT = –200 mA
Figure 8. On-Resistance vs Input Voltage
Single Channel
TPS22966 D010_SLVSBH4F.gif
VBIAS = 5 V IOUT = 1 mA VON = 0 V
Figure 10. Pulldown Resistance vs Input Voltage
Single Channel
TPS22966 D012_SLVSBH4F.gif
VBIAS = 2.5 V CT = 1 nF
Figure 12. Delay Time vs Input Voltage
TPS22966 D014_SLVSBH4F.gif
VBIAS = 2.5 V CT = 1 nF
Figure 14. Fall Time vs Input Voltage
TPS22966 D016_SLVSBH4F.gif
VBIAS = 2.5 V CT = 1 nF
Figure 16. Turnoff Time vs Input Voltage
TPS22966 D018_SLVSBH4F.gif
VBIAS = 2.5 V CT = 1 nF
Figure 18. Turnon Time vs Input Voltage
TPS22966 D020_SLVSBH4F.gif
VBIAS = 2.5 V CT = 1 nF
Figure 20. Rise Time vs Input Voltage
TPS22966 D022_SLVSBH4F.gif
VIN = 2.5 V CT = 1 nF
Figure 22. Rise Time vs Bias Voltage

6.9 Typical AC Characteristics

At TA = 25ºC, CT = 1 nF
TPS22966 sc1_lvsbh4.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 23. Turnon Response Time
TPS22966 sc3_lvsbh4.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 25. Turnon Response Time
TPS22966 sc5_lvsbh4.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 27. Turnoff Response Time
TPS22966 sc7_lvsbh4.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 29. Turnoff Response Time
TPS22966 sc2_lvsbh4.png
VIN = 0.8 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 24. Turnon Response Time
TPS22966 sc4_lvsbh4.png
VIN = 5 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 26. Turnon Response Time
TPS22966 sc6_lvsbh4.png
VIN = 0.8 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 28. Turnoff Response Time
TPS22966 sc8_lvsbh4.png
VIN = 5 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 30. Turnoff Response Time