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7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage	–0.3	6	V
V_OUT	Output voltage	–0.3	6	V
V_BIAS	Bias voltage	–0.3	6	V
V_ON	On voltage	–0.3	6	V
I_MAX	Maximum continuous switch current		6	A
I_PLS	Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle		8	A
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN	Input voltage		0.6	V_BIAS	V
V_BIAS	Bias voltage		2.5	5.7	V
V_ON	ON voltage		0	5.7	V
V_OUT	Output voltage			V_IN	V
V_IH	High-level input voltage, ON	V_BIAS = 2.5 V to 5 V, T_A< 85°C	1.05	5.7	V
		V_BIAS = 2.5 V to 5 V, T_A< 105°C	1.1	5.7
		V_BIAS = 5 V to 5.7 V, T_A< 105°C	1.2	5.7
V_IL	Low-level input voltage, ON	V_BIAS = 2.5 V to 5.7 V	0	0.5	V
C_IN	Input capacitor		1⁽¹⁾		µF
T_A	Operating free-air temperature⁽¹⁾⁽²⁾		–40	105	°C

(1) See the Application Information section.

(2) In applications where high power dissipation and-or poor package thermal resistance is present, the maximum ambient temperature may have to be derated and device lifetime may be affected. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (P_D(max)), and the junction-to-ambient thermal resistance of the part-package in the application (θ_JA), and can be approximated by the following equation: T_A _(max) = T_J(max) – (θ_JA × P_D(max)).

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS22975	UNIT
		DSG (WSON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	74.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	81	°C/W
R_θJB	Junction-to-board thermal resistance	44.7	°C/W
ψ_JT	Junction-to-top characterization parameter	3.9	°C/W
ψ_JB	Junction-to-board characterization parameter	45.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	16.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—V_BIAS = 5 V

Unless otherwise noted, the specifications in the following table applies where V_BIAS = 5 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIASquiescent current	I_OUT = 0 A, V_IN = V_ON = 5 V		–40°C to +105°C	37	45	µA
I_{SD, VBIAS}	V_BIAS shutdown current	V_ON = V_OUT = 0 V		–40°C to +105°C		2.3	µA
I_{SD, VIN}	V_IN off-state supply current	V_ON = V_OUT = 0 V	V_IN = 5 V	–40°C to +85°C	0.005	5	µA
			V_IN = 5 V	–40°C to +105°C		10
			V_IN = 3.3 V	–40°C to +85°C	0.002	1.5
			V_IN = 3.3 V	–40°C to +105°C		3.5
			V_IN = 1.8 V	–40°C to +85°C	0.002	1
			V_IN = 1.8 V	–40°C to +105°C		2
			V_IN = 0.6 V	–40°C to +85°C	0.001	0.5
			V_IN = 0.6 V	–40°C to +105°C		1
I_ON	On-pin input leakage current	V_ON = 5.5 V		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-resistance	I_OUT = –200 mA	V_IN = 5 V	25°C	16	19	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 3.3 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.8 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.5 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.05 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 0.6 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
V_{ON, H}_YS	On-pin hysteresis	V_IN = 5 V		25°C	120		mV
R_PD ⁽¹⁾	Output pulldown resistance	V_IN = 5 V, V_ON = 0 V		–40°C to +105°C	230	300	Ω
T_SD	Thermal shutdown	Junction temperature rising			160		°C
T_{SD, HYS}	Thermal shutdown hysteresis	Junction temperature falling			20		°C

(1) TPS22975 only

7.6 Electrical Characteristics—V_BIAS = 2.5 V

Unless otherwise noted, the specifications in the following table applies where V_BIAS = 2.5 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIASquiescent current	I_OUT = 0 mA, V_IN = V_ON = 2.5 V		–40°C to +105°C	14	20	µA
I_{SD, VBIAS}	V_BIAS shutdown current	V_ON = V_OUT = 0 V		–40°C to +105°C		1	µA
I_{SD, VIN}	V_IN off-state supply current	V_ON = V_OUT = 0 V	V_IN = 2.5 V	–40°C to +85°C	0.005	1.3	µA
			V_IN = 2.5 V	–40°C to +105°C		2.6
			V_IN = 1.8 V	–40°C to +85°C	0.002	1
			V_IN = 1.8 V	–40°C to +105°C		2
			V_IN = 1.05 V	–40°C to +85°C	0.002	0.8
			V_IN = 1.05 V	–40°C to +105°C		1.5
			V_IN = 0.6 V	–40°C to +85°C	0.001	0.5
			V_IN = 0.6 V	–40°C to +105°C		1
I_ON	On-pin input leakage current	V_ON = 5.5 V		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-resistance	I_OUT = –200 mA	V_IN = 2.5 V	25°C	20	26	mΩ
				–40°C to +85°C		32
				–40°C to +105°C		34
			V_IN = 1.8 V	25°C	18	23
				–40°C to +85°C		29
				–40°C to +105°C		31
			V_IN = 1.5 V	25°C	18	22
				–40°C to +85°C		28
				–40°C to +105°C		30
			V_IN = 1.2 V	25°C	17	22
				–40°C to +85°C		27
				–40°C to +105°C		29
			V_IN = 0.6 V	25°C	17	21
				–40°C to +85°C		26
				–40°C to +105°C		27
V_{ON, HYS}	On-pin hysteresis	V_IN = 2.5 V		25°C	85		mV
R_PD⁽¹⁾	Output pulldown resistance	V_IN = 2.5 V, V_ON = 0 V		–40°C to +105°C	230	330	Ω
T_SD	Thermal shutdown	Junction temperature rising			160		°C
T_{SD, HYS}	Thermal shutdown hysteresis	Junction temperature falling			20		°C

(1) TPS22975 only

7.7 Switching Characteristics

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1450	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1750
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	600
V_IN = 0.6 V, V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	620	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	280
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	485
V_IN = V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2180	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2150
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1120
V_IN = 0.6 V, V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1315	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	3
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	650
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	975

7.8 Typical DC Characteristics

V_IN = V_BIAS	V_ON = 5 V	V_OUT = 0 V

Figure 1. V_BIAS Quiescent Current vs Bias Voltage

V_IN = V_BIAS	V_ON = 0 V	V_OUT = 0 V

Figure 3. V_BIAS Shutdown Current vs Bias Voltage

V_BIAS = 5 V	I_OUT = –200 mA	V_ON = 5 V
Note:	All three R_ON curves have the same values; therefore, only one line is visible.

Figure 5. On-Resistance vs Ambient Temperature

V_BIAS = 5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 7. On-Resistance vs Input Voltage

T_A = 25°C	I_OUT = –200 mA	V_ON = 5 V

Figure 9. On-Resistance vs Bias Voltage

V_BIAS = 5 V	V_ON = 5 V	V_OUT = 0 V

Figure 2. V_BIAS Quiescent Current vs Input Voltage

V_BIAS = 5 V	V_ON = 0 V	V_OUT = 0 V

Figure 4. V_IN Off-State Supply Current vs Input Voltage

V_BIAS = 2.5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 6. On-Resistance vs Ambient Temperature

V_BIAS = 2.5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 8. On-Resistance vs Input Voltage

V_IN = 2.5 V	V_ON = 0 V

Figure 10. Output Pull Down Resistance vs Bias Voltage

7.9 Typical AC Characteristics

T_A = 25°C, C_T = 1000 pF, C_IN = 1 µF, C_L = 0.1 µF, R_L = 10 Ω

V_BIAS = 2.5 V

Figure 11. Delay Time vs Input Voltage

V_BIAS = 2.5 V

Figure 13. Fall Time vs Input Voltage

V_BIAS = 2.5 V

Figure 15. Turnoff Time vs Input Voltage

V_BIAS = 2.5 V

Figure 17. Turnon Time vs Input Voltage

V_BIAS = 2.5 V

Figure 19. Rise Time vs Input Voltage

V_IN = 0.6 V	V_BIAS = 2.5 V

Figure 21. Turnon Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V

Figure 23. Turnon Response Time

V_IN = 0.6 V	V_BIAS = 2.5 V

Figure 25. Turnoff Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V

Figure 27. Turnoff Response Time

V_BIAS = 5 V

Figure 12. Delay Time vs Input Voltage

V_BIAS = 5 V

Figure 14. Fall Time vs Input Voltage

V_BIAS = 5 V

Figure 16. Turnoff Time vs Input Voltage

V_BIAS = 5 V

Figure 18. Turnon Time vs Input Voltage

V_BIAS = 5 V

Figure 20. Rise Time vs Input Voltage

V_IN = 0.6 V	V_BIAS = 5 V

Figure 22. Turnon Response Time

V_IN = 5 V	V_BIAS = 5 V

Figure 24. Turnon Response Time

V_IN = 0.6 V	V_BIAS = 5 V

Figure 26. Turnoff Response Time

V_IN = 5 V	V_BIAS = 5 V

Figure 28. Turnoff Response Time

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7 Specifications

7.1 Absolute Maximum Ratings

7.2 ESD Ratings

7.3 Recommended Operating Conditions

7.4 Thermal Information

7.5 Electrical Characteristics—V_BIAS = 5 V

7.6 Electrical Characteristics—V_BIAS = 2.5 V

7.7 Switching Characteristics

7.8 Typical DC Characteristics

7.9 Typical AC Characteristics

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7 Specifications

7.1 Absolute Maximum Ratings

7.2 ESD Ratings

7.3 Recommended Operating Conditions

7.4 Thermal Information

7.5 Electrical Characteristics—VBIAS = 5 V

7.6 Electrical Characteristics—VBIAS = 2.5 V

7.7 Switching Characteristics

7.8 Typical DC Characteristics

7.9 Typical AC Characteristics

7.5 Electrical Characteristics—V_BIAS = 5 V

7.6 Electrical Characteristics—V_BIAS = 2.5 V