ZHCSJ10B September   2006  – November 2018 TPS2376-H

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用电路
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Programmable Inrush Current Limit and Fixed Operational Current Limit
      3. 8.3.3 Power Good
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Internal Thresholds
      2. 9.1.2 Detection
      3. 9.1.3 Classification
    2. 9.2 Typical Application
      1. 9.2.1 External Components
        1. 9.2.1.1 Detection Resistor and UVLO Divider
        2. 9.2.1.2 Magnetics
        3. 9.2.1.3 Input Diodes or Diode Bridges
        4. 9.2.1.4 Input Capacitor
        5. 9.2.1.5 Load Capacitor
        6. 9.2.1.6 Transient Suppressor
  10. 10Power Supply Recommendations
    1. 10.1 Maintain Power Signature
    2. 10.2 DC/DC Converter Startup
    3. 10.3 Auxiliary Power Source ORing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
    4. 11.4 ESD
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.6 Electrical Characteristics

V(VDD) = 48 V, R(DET) = 24.9 kΩ, R(CLASS) = 255 Ω, R(ILIM) = 287 kΩ, and –40°C ≤ TJ  ≤ 125°C, unless otherwise noted. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to VSS unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION
Offset current DET open, V(VDD) = V(RTN) = 1.9 V, measure I(VDD) + I(RTN) 0.3 3 μA
Sleep current DET open, V(VDD) = V(RTN) = 10.1 V, measure I(VDD) + I(RTN) 4 12 μA
DET leakage current V(DET) = V(VDD) = 57 V, measure I(DET) 0.1 5 μA
Detection current V(RTN) = V(VDD),
R(DET) = 24.9 kΩ,
measure I(VDD) + I(RTN) + I(DET) 		V(VDD) = 1.4 V 53.7 56 58.3 μA
V(VDD) = 10.1 V 395 410 417 μA
CLASSIFICATION
I(CLASS) Classification current(1) Measure I(VDD) + I(RTN), 13 V ≤ V(VDD)  ≤ 21 V, V(VDD) = V(RTN) mA
R(CLASS) = 4420 Ω 2.2 2.4 2.8
R(CLASS) = 953 Ω 10.3 10.6 11.3
R(CLASS) = 549 Ω 17.7 18.3 19.5
R(CLASS) = 357 Ω 27.1 28 29.5
R(CLASS) = 255 Ω 38 39.4 41.2
V(CL_ON) Classification lower threshold Regulator turns on, V(VDD) rising 10.2 11.3 13 V
Hysteresis 1.6 1.8 1.95
V(CU_OFF) Classification upper threshold Regulator turns off, V(VDD) rising 21 21.9 23 V
V(CU_H) Hysteresis 0.5 0.78 1 V
Ilkg Leakage current V(CLASS) = 0 V, V(VDD) = 57 V 1 μA
PASS DEVICE
rDS(on) On resistance 0.58 1 Ω
Leakage current V(VDD) = V(RTN) = 30 V 15 μA
Current limit V(RTN) = 1 V 625 765 900 mA
I(LIM) Inrush limit V(RTN) = 2 V, R(ILIM) = 178 kΩ 160 224 296 mA
Inrush current termination (2) V(RTN) falling, R(ILIM) = 287 kΩ, inrush state→normal operation 85 91 100 %
Leakage current, ILIM V(VDD) = 15 V, V(UVLO) = 0 V 1 μA
PG
Voltage threshold rising (3) V(RTN) rising 9.5 10 10.5 V
PG deglitch Delay rising and falling PG 75 150 225 μs
Output low voltage I(PG) = 2 mA, V(RTN) = 34 V,
V(VDD) = 38 V, V(RTN) falling 		0.12 0.4 V
I(PG) = 2 mA, V(RTN) = 0 V, V(VDD) = 25 V 0.12 0.4 V
Leakage current V(PG) = 57 V, V(RTN) = 0 V 0.1 1 μA
UVLO
V(UVLO_R) Voltage at UVLO - TPS2376-H V(UVLO) rising 2.43 2.49 2.57 V
V(UVLO_F) V(UVLO) falling 1.87 1.93 1.98
Hysteresis 0.53 0.56 0.58
THERMAL SHUTDOWN
Shutdown temperature Temperature rising 135 °C
Hysteresis 20 °C
BIAS CURRENT
Operating current I(VDD) 240 450 μA
(1) Classification is tested with exact resistor values. A 1% tolerance classification resistor ensures  compliance with IEEE 802.3af limits.
(2) This parameter specifies the RTN current value, as a percentage of the steady state inrush current, below  which it must fall to make PG assert (open-drain).
(3) Start with V(RTN) = 0 V, then increase V(RTN) until PG switches. Measure before thermal shutdown occurs.
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