ZHCS845A March   2012  – July 2015 TPS2379

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CDB Converter Disable Bar Pin Interface
      2. 8.3.2 CLS Classification
      3. 8.3.3 DEN Detection and Enable
      4. 8.3.4 GATE Auxiliary Gate Driver
        1. 8.3.4.1 External Boost Circuit (Q1, Q2, and RBLST) Considerations
      5. 8.3.5 Internal Pass MOSFET
      6. 8.3.6 T2P Type-2 PSE Indicator
      7. 8.3.7 VDD Supply Voltage
      8. 8.3.8 VSS
      9. 8.3.9 PowerPAD
    4. 8.4 Device Functional Modes
      1. 8.4.1 PoE Overview
        1. 8.4.1.1  Threshold Voltages
        2. 8.4.1.2  PoE Start-Up Sequence
        3. 8.4.1.3  Detection
        4. 8.4.1.4  Hardware Classification
        5. 8.4.1.5  Inrush and Start-up
        6. 8.4.1.6  Maintain Power Signature
        7. 8.4.1.7  Start-up and Operation
        8. 8.4.1.8  PD Hotswap Operation
        9. 8.4.1.9  CDB and T2P
        10. 8.4.1.10 Auxiliary Pass MOSFET Control
        11. 8.4.1.11 Using DEN to Disable PoE
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedures
        1. 9.2.2.1 Input Bridges and Schottky Diodes
        2. 9.2.2.2 Protection, D1
        3. 9.2.2.3 Capacitor, C1
        4. 9.2.2.4 Detection Resistor, RDEN
        5. 9.2.2.5 Classification Resistor, RCLS
        6. 9.2.2.6 External Boost Circuit
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 EMI Containment
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations and OTSD
    4. 11.4 ESD
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档　
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Input voltage VDD, DEN –0.3 100 V
RTN(2) –0.6 100
CLS(3) –0.3 6.5
GATE(3) –0.3 18
[CDB, T2P] to RTN –0.3 100
Sinking current RTN(4) Internally limited mA
CDB, T2P 5
DEN 1
Sourcing current CLS 65 mA
TJMAX Internally limited °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) With I(RTN) = 0
(3) Do not apply voltages to these pins
(4) SOA limited to RTN = 80 V at 1.2 A.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 500
IEC 61000-4-2 contact discharge(3) 8000
IEC 61000-4-2 air-gap discharge(3) 15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Discharges applied to circuit of Figure 26 between RJ-45, adapter, and output voltage rails.

6.3 Recommended Operating Conditions

Voltages with respect to VSS (unless otherwise noted)
MIN NOM MAX UNIT
Input voltage range RTN, VDD 0 57 V
T2P or CDB to RTN 0 57
Sinking current RTN 0.85 A
CDB, T2P 2 mA
Resistance CLS(1) 60 Ω
Junction temperature –40 125 °C
(1) Voltage should not be externally applied to this pin.

6.4 Thermal Information

THERMAL METRIC(1) TPS2379 UNIT
DDA (HSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 45.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.9 °C/W
RθJB Junction-to-board thermal resistance 28.8 °C/W
ψJT Junction-to-top characterization parameter 8.9 °C/W
ψJB Junction-to-board characterization parameter 28.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

40 V ≤ VVDD ≤ 57 V, RDEN = 24.9 kΩ, CDB, CLS, GATE, T2P open; –40°C ≤ TJ ≤ 125°C. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to VVSS (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN)
Detection current Measure ISUPPLY(VDD, RTN, DEN) µA
VDD = 1.4 V 53.8 56.5 58.3
VDD = 10.1 V, Not in mark 395 410 417
Bias current DEN open, VVDD = 10.1 V, Measure ISUPPLY, Not in mark 3 4.8 12 µA
VPD_DIS Disable threshold DEN falling 3 3.7 5 V
Hysteresis 50 113 200 mV
CLASSIFICATION (CLS)
ICLS Classification current 13 V ≤ VDD ≤ 21 V, Measure IVDD + IDEN + IRTN
RCLS = 1270 Ω 1.8 2.17 2.6 mA
RCLS = 243 Ω 9.9 10.6 11.2
RCLS = 137 Ω 17.6 18.6 19.4
RCLS = 90.9 Ω 26.5 27.9 29.3
RCLS = 63.4 Ω 38 39.9 42
VCL_ON Class lower threshold VDD rising, VCLS ↑ 11.9 12.5 13 V
Hysteresis 1.4 1.6 1.7
VCL_H
VCU_ON Class upper threshold VDD rising, VCLS↓ 21 22 23 V
VCU_H Hysteresis 0.5 0.78 0.9
VMSR Mark reset threshold VVDD falling 3 3.9 5
Mark state resistance 2-point measurement at 5 V and 10.1 V 6 10 12 kΩ
Leakage current VDD = 57 V, VCLS = 0 V, measure ICLS 1 µA
GATE (AUXILIARY GATE OUTPUT)
Output high voltage 8 10 12 V
Sourcing current VGATE = 0 V 25 38 60 µA
Sinking current VGATE = 4 V, VDD = 48→ 25 V 0.6 1.25 1.75 mA
VDD = 25 V, VGATE = 0→ 4 V 5 23.2 30
Current limit delay 150 365 600 µs
PASS DEVICE (RTN)
rDS(ON) On resistance 0.2 0.42 0.75 Ω
Input bias current VDD = VRTN = 30 V, measure IRTN 30 µA
Current limit VRTN =1.5 V 0.85 1 1.2 A
Inrush current limit VRTN = 2 V, VDD: 20 V → 48 V 100 140 180 mA
Inrush termination Percentage of inrush current 80% 90% 99%
Foldback threshold VRTN rising 11 12.3 13.6 V
Foldback deglitch time VRTN rising to when current limit changes to inrush current limit 500 800 1500 µs
CONVERTER DISABLE (CDB)
Output low voltage ICDB = 2 mA, VRTN = 2 V, VDD: 20 V → 48 V 0.27 0.50 V
Minimum voltage, V(VDD –RTN), for CDB to be valid VCDB = VDD, ICDB = 1 mA, in inrush 3 V
Leakage current VCDB = 57 V, VRTN = 0 V 10 µA
TYPE 2 PSE INDICATION (T2P)
VT2P Output low voltage IT2P = 2 mA, after 2-event classification and inrush is complete, VRTN = 0 V 0.26 0.60 V
Leakage current VT2P = 57 V, VRTN = 0 V 10 µA
UVLO
VUVLO_R UVLO rising threshold VVDD rising 36.3 38.1 40 V
UVLO falling threshold VVDD falling 30.5 32 33.6
VUVLO_H UVLO hysteresis 6.1 V
THERMAL SHUTDOWN
Shutdown TJ↑ 135 145 °C
Hysteresis 20
VDD BIAS CURRENT
Operating current 40 V ≤ VVDD ≤ 57 V 285 500 µA

6.6 Typical Characteristics

TPS2379 Detection Bias Current vs PoE Voltage.png
Figure 1. Detection Bias Current vs PoE Voltage
TPS2379 Classificatin Upper Threshold vs Temperature.png
Figure 3. Classification Upper Threshold vs Temperature
TPS2379 IVDD Bias Current vs Voltage.png
Figure 5. IVDD Bias Current vs Voltage
TPS2379 Mark Resistance vs Temperature.png
Figure 7. Mark Resistance vs Temperature
TPS2379 PoE Inrush Current Limit vs Temperature.png
Figure 9. PoE Inrush Current Limit vs Temperature
TPS2379 PoE Current Limit vs Temperature.png
Figure 11. PoE Current Limit vs Temperature
TPS2379 UVLO Falling Threshold vs Temperature.png
Figure 13. UVLO Falling Threshold vs Temperature
TPS2379 Detection Resistance vs PoE Voltage.png
Figure 2. Detection Resistance vs PoE Voltage
TPS2379 Classification Lower Threshold vs Temperature.png
Figure 4. Classification Lower Threshold vs Temperature
TPS2379 Mark Reset Threshold vs Temperature.png
Figure 6. Mark Reset Threshold vs Temperature
TPS2379 Pass FET Resistance vs Temperature.png
Figure 8. Pass FET Resistance vs Temperature
TPS2379 Inrush Termination Threshold vs Temperature.png
Figure 10. Inrush Termination Threshold vs Temperature
TPS2379 UVLO Rising Threshold vs Temperature.png
Figure 12. UVLO Rising Threshold vs Temperature
TPS2379 Auxilary Gate Voltage vs Temperauture.png
Figure 14. Auxiliary Gate Voltage vs Temperature
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