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ZHCSCE7I March 2014 – July 2019 TPS23861

PRODUCTION DATA.

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PW|28
- MPDS364

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6.5 Electrical Characteristics

–40 ≤ T_J ≤ +125°C, V_VDD = 3.3 V, V_VPWR = 48 V, V_DGND = V_AGND, DGND, KSENSA and KSENSB connected to AGND, and all outputs are unloaded, PoEPn = 0, Positive currents are into pins, R_S = 0.255 Ω, to KSENSA (SEN1 or SEN2) or to KSENSB (SEN3 or SEN4), R_SENS = 22 Ω, R_DRAIN = 47 Ω, typical values are at 25°C. All voltages are with respect to AGND, operating registers loaded with default values (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY VPWR
I_VPWR	VPWR current consumption	V_VPWR = 57 V		3.5	7	mA
V_{UVLOPW_F}	VPWR UVLO falling threshold	Internal oscillator stops operating	14.5		17.5	V
V_{PUV_F}	VPWR Undervoltage falling threshold	V_PUV for port de-assertion	25	26.5	28	V
V_{UVLOPW_R}	VPWR UVLO rising threshold		15.5		18.5	V
INPUT SUPPLY VDD
I_VDD	VDD current consumption			5	6	mA
V_{UVDD_F}	VDD UVLO falling threshold	For port turn off	2	2.2	2.4	V
V_{UVDD_R}	VDD UVLO rising threshold		2.4	2.6	2.8	V
V_{UVDD_HYS}	Hysteresis VDD UVLO⁽¹⁾			0.4		V
DETECTION
I_DET	Detection current	First detection point, V_VPWR – V_DRAINn = 0 V	145	160	190	µA
		2nd detection point, V_VPWR – V_DRAINn = 0 V	235	270	300	µA
		High Current detection point, V_VPWR – V_DRAINn = 0 V	490	540	585	µA
ΔI_DET	2nd – 1st detection currents	At V_VPWR – V_DRAINn = 0 V	98	110	118	µA
V_detect	Open circuit detection voltage	V_VPWR – V_DRAINn	17.5	19	22	V
R_{REJ_LOW}	Rejected resistance low range		0.85		15	kΩ
R_{REJ_HI}	Rejected resistance high range		33		50	kΩ
R_ACCEPT	Accepted resistance range		19	25	26.5	kΩ
R_SHORT	Shorted port threshold				350	Ω
R_OPEN	Open port threshold		55			kΩ
CLASSIFICATION
V_CLASS	Classification voltage	V_VPWR – V_DRAINn, V_SENn ≥ 0 mV , I_port ≥ 180 µA,	15.5	18.5	20.5	V
I_{CLASS_Lim}	Classification current limit	V_VPWR – V_DRAINn = 0 V		70	90	mA
I_{CLASS_TH}	Classification threshold current	Class 0-1	5		8	mA
		Class 1-2	13		16	mA
		Class 2-3	21		25	mA
		Class 3-4	31		35	mA
		Class 4- overcurrent	45		51	mA
V_MARK	Mark voltage	4 mA ≥ I_port ≥ 180 µA, V_VPWR – V_DRAINn	7		10	V
I_{MARK_Lim}	Mark sinking current Limit	V_VPWR – V_DRAINn = 0 V	10	70	90	mA
GATE
V_GOH	Gate drive voltage	V_GATEn , I_GATE = –1 μA	10		12.5	V
I_GO-	Gate sinking current with power-on reset, shutdown detected or port turn off command	V_GATEn = 5 V	80	100		mA
I_{GO short–}	Gate sinking current with port short-circuit	V_GATEn = 5 V, V_SENn ≥ V_SHORT (or V_SHORT2X if 2x mode)	80	100	150	mA
I_GO+	Gate sourcing current	V_GATEn = 0 V, IGATE = 0	39	50	63	µA
I_GO+	Gate sourcing current	IGATE = 1	18	25	34	µA
DRAIN INPUT
V_PGT	Power good threshold	Measured at V_DRAINn	1.0	2.13	3	V
V_SHT	Shorted FET threshold	Measured at V_DRAINn	4	6	8	V
R_DRAIN	Resistance from DRAINn to VPWR	Any operating mode except during detection or while the port is ON, including in device reset state	80	100	190	kΩ
I_DRAIN	DRAINn pin bias current	V_DRAINn = 48 V, port OFF (not in detection)			1	µA
I_DRAIN	DRAINn pin bias current	V_VPWR - V_DRAINn = 30 V, port ON		75	100	µA
A/D CONVERTER
T_CONV	Conversion time , A/D #1 to 4	All ranges, each port current	0.65	0.8	1	ms
A_DCBW⁽¹⁾	ADC integration bandwidth (–3 dB)⁽¹⁾			320		Hz
T_{INT_CUR}	Integration (averaging) time, current	Each port, port ON current	80	100	125	ms
T_{INT_DET}	Integration (averaging) time, detection⁽¹⁾	MAINS bit = 0			20	ms
	Powered port voltage conversion scale factor and accuracy	At V_VPWR – V_DRAINn = 57 V, 0°C to 125°C	15175	15565	15955	Counts
		At V_VPWR – V_DRAINn = 44 V, 0°C to 125°C	11713	12015	12316	Counts
		At V_VPWR – V_DRAINn = 57 V, –40°C to 125°C	15020	15565	16110	Counts
		At V_VPWR – V_DRAINn = 44 V, –40°C to 125°C	11594	12015	12436	Counts
	Powered port current conversion scale factor and accuracy	At port current = 770 mA	12300	12616	12932	Counts
	Powered port current conversion scale factor and accuracy	At port current = 7.5 mA	90	123	156	Counts
	Input voltage conversion scale factor and accuracy	At V_VPWR = 57 V	15175	15565	15955	Counts
	Input voltage conversion scale factor and accuracy	At V_VPWR = 44 V	11713	12015	12316	Counts
V_OS	Powered port voltage conversion offset	At V_VPWR – V_DRAINn = 0.3 V	0		600	mV
δ_V/V_PORT	Voltage reading accuracy	At 44 V to 57 V –40°C to 125°C	–3.5%		3.5%
δ_V/V_PORT	Voltage reading accuracy	At 44 V to 57 V 0°C to 125°C	–2.5%		2.5%
δ_I/I_port	Current reading accuracy	At 50 mA to 770 mA	–2.5%		2.5%
PORT CURRENT SENSE
V_CUT	I_CUT limit	V_DRAINn = 0 V, I_CUT port n[2:0] = 000, default	90.60	95.37	100.14	mV
		V_DRAINn = 0 V, I_CUT port n[2:0] = 001	26.65	28.05	29.45	mV
		V_DRAINn = 0 V, I_CUT port n[2:0] = 010	49.42	52.02	54.62	mV
		V_DRAINn = 0 V, I_CUT port n[2:0] = 110	156.27	164.5	172.72	mV
		V_DRAINn = 0 V, I_CUT port n[2:0] = 111	222.87	234.6	246.33	mV
δ_ICUT/I_CUT	I_CUT tolerance		–5%		5%
V_INRUSH	I_Inrush limit	At port turn on, V_VPWR – V_DRAINn = 1 V	10	23	31	mV
		V_VPWR - V_DRAINn = 10 V	20	33	46	mV
		V_VPWR - V_DRAINn = 30 V	102		114.7	mV
		V_VPWR – V_DRAINn = 55 V	102		114.7	mV
V_LIM	ILIM limit with PoEPn = 0	V_DRAINn = 1 V	102		114.7	mV
		V_DRAINn = 13 V	102		114.7	mV
		V_DRAINn = 30 V	15	23	31	mV
		V_DRAINn = 48 V	15	23	31	mV
V_LIM2X	ILIM limit with PoEPn = 1	V_DRAINn = 1 V	260	270.3	285	mV
		V_DRAINn = 10 V	127	140	153	mV
		V_DRAINn = 30 V	15	23	31	mV
		V_DRAINn = 48 V	15	23	31	mV
V_SHORT	I_SHORT threshold with PoEPn = 0	Threshold for GATE to be less than 1 V, 2 μs after application of pulse	140		183	mV
V_SHORT2X	I_SHORT threshold with PoEPn = 1		357		408	mV
I_BIAS	Sense pin bias current	Port ON or during class	-2.25		0	µA
V_I(min)	Disconnect threshold	DCTHn = 00, default	1.275		2.55	mV
		DCTHn = 01	2.55		5.1	mV
		DCTHn = 10	5.1		10.2	mV
		DCTHn = 11	8.5		17	mV
DIGITAL INTERFACE AT V_VDD = 3.3 V
V_IH	Digital input high		2.1			V
V_IL	Digital input low				0.9	V
V_{IT_HYS}	Input voltage hysteresis (SCL, SDAI, AIN, A3, RESET, SHTDWN)		0.17			V
V_OL	Digital output Low, SDAO	I_OL = 9 mA			0.4	V
	Digital output Low, INT	I_OL = 3 mA			0.4	V
R_pullup	Pullup resistor to VDD	RESET, AIN, A3, SHTDWN	30	50	80	kΩ
AOUT OUTPUT
V_{OL_AOUT}	AOUT output low voltage	During slave address programming, I_AOUT = 1 mA			0.7	V
EEPROM (I²C Slave Address)
n_{EE_cyc}	EEPROM endurance	40 V < V_VPWR < 57 V	25			cycles
t_WC	Write cycle time (byte or page)	40 V < V_VPWR < 57 V		10	100	ms
THERMAL SHUTDOWN
T_SD	Thermal shutdown temperature	Temperature rising	143	154	161	°C
	Hysteresis⁽¹⁾			8		°C

(1) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty.