ZHCSK65E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用图
  4. 4 修订历史记录
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TPS2410, 11
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Pins
        1. 8.3.1.1  A, C:
        2. 8.3.1.2  BYP:
        3. 8.3.1.3  FLTR:
        4. 8.3.1.4  FLTB:
        5. 8.3.1.5  GATE:
        6. 8.3.1.6  GND:
        7. 8.3.1.7  RSET:
        8. 8.3.1.8  RSVD:
        9. 8.3.1.9  STAT
        10. 8.3.1.10 UV, OV, PG:
        11. 8.3.1.11 VDD:
      2. 8.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 8.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 8.3.4 UV, OV, and PG
      5. 8.3.5 Input ORing and Stat
    4. 8.4 Device Functional Modes
      1. 8.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  9. 9 Application and Implementation
    1. 9.1 Typical Connections
      1. 9.1.1 N+1 Power Supply
      2. 9.1.2 Input ORing
    2. 9.2 Typical Application Examples
      1. 9.2.1 VDD, BYP, and Powering Options
      2. 9.2.2 Bidirectional Blocking and Protection of C
      3. 9.2.3 ORing Examples
      4. 9.2.4 Design Requirements
        1. 9.2.4.1 MOSFET Selection and R(RSET)
        2. 9.2.4.2 TPS2410 Regulation-loop Stability
      5. 9.2.5 Detailed Design Procedure
      6. 9.2.6 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 System Design and Behavior with Transients
  11. 11Layout
    1. 11.1 Layout Considerations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

6 Pin Configuration and Functions

PW Package
TSSOP 14 Pin
Top View

Pin Functions, PW

PIN I/O DESCRIPTION
NAME NO.
VDD 1 PWR Input power for the gate drive charge pump and internal controls. VDD must be connected to a supply voltage ≥ 3 V.
RSET 2 I Connect a resistor to ground to program the turn-off threshold. Leaving RSET open results in a slightly positive V(A-C) turn-off threshold.
STAT 3 I/O STAT is a multifunction pin. A high output indicates that the MOSFET gate is being driven high. Overdriving STAT low while GATE is high shifts the fast-turnoff threshold negative. STAT has a weak pull-up to VDD.
FLTB 4 O Open drain fault output. Fault is active (low) for any of the following conditions:
  • Insufficient VDD
  • GATE should be high but is not.
  • The MOSFET should be ON but the forward voltage exceeds 0.4 V.
OV 5 I OV is a voltage monitor that contributes to the PG output, and also causes the MOSFET to turn off if it is above the 0.6-V threshold. OV is programmable via an external resistor divider. An OV voltage above 0.6 V indicates a bus voltage that is too high.
UV 6 I UV is a voltage monitor that contributes to the PG output. The UV input has a 0.6 V threshold and is programmable via an external resistor divider. A UV voltage above 0.6V indicates a bus voltage that is above its minimum acceptable voltage. A low UV input does not effect the gate drive.
GND 7 PWR Device ground.
GATE 8 O Connect to the gate of the external MOSFET. Controls the MOSFET to emulate a low forward-voltage diode.
RSVD 9 PWR This pin must be connected to GND.
C 10 I Voltage sense input that connects to the simulated diode cathode. Connect to the MOSFET drain in the typical configuration.
A 11 I Voltage sense input that connects to the simulated diode anode. A also serves as the reference for the charge-pump bias supply on BYP. Connect to the MOSFET source in the typical configuration.
FLTR 12 I A capacitor connected from FLTR to A filters the input to the fast comparator. Filtering allows the TPS2410 to ignore spurious transients on the A and C inputs. This pin may be left open to achieve the fastest response time.
BYP 13 I/O Connect a storage capacitor from BYP to A to filter the gate drive supply voltage.
PG 14 O An open-drain Power Good indicator. PG is open if the UV input is above its threshold, the OV is below its threshold, and the internal UVLO is satisfied.
RMS Package
UQFN 14 Pin
Top View
TPS2410 TPS2411 RMS_qfn_pin_diagram.gif

Pin Functions, RMS

PIN I/O DESCRIPTION
NAME NO.
BYP 1 I/O Connect a storage capacitor from BYP to A to filter the gate drive supply voltage.
PG; 2 O An open-drain Power Good indicator. PG is open if the UV input is above its threshold, the OV is below its threshold, and the internal UVLO is satisfied.
VDD 3 PWR Input power for the gate drive charge pump and internal controls. VDD must be connected to a supply voltage ≥ 3 V.
RSET 4 I Connect a resistor to ground to program the turn-off threshold. Leaving RSET open results in a slightly positive V(A-C) turn-off threshold.
STAT 5 I/O STAT is a multifunction pin. A high output indicates that the MOSFET gate is being driven high. Overdriving STAT low while GATE is high shifts the fast-turnoff threshold negative. STAT has a weak pull-up to VDD.
FLTB 6 O Open drain fault output. Fault is active (low) for any of the following conditions:
  • Insufficient VDD
  • GATE should be high but is not.
  • The MOSFET should be ON but the forward voltage exceeds 0.4 V.
OV 7 I OV is a voltage monitor that contributes to the PG output, and also causes the MOSFET to turn off if it is above the 0.6-V threshold. OV is programmable via an external resistor divider. An OV voltage above 0.6 V indicates a bus voltage that is too high.
UV 8 I UV is a voltage monitor that contributes to the PG output. The UV input has a 0.6 V threshold and is programmable via an external resistor divider. A UV voltage above 0.6V indicates a bus voltage that is above its minimum acceptable voltage. A low UV input does not effect the gate drive.
GND 9 PWR Device ground.
GATE 10 O Connect to the gate of the external MOSFET. Controls the MOSFET to emulate a low forward-voltage diode.
RSVD 11 PWR This pin must be connected to GND.
C 12 I Voltage sense input that connects to the simulated diode cathode. Connect to the MOSFET drain in the typical configuration.
A 13 I Voltage sense input that connects to the simulated diode anode. A also serves as the reference for the charge-pump bias supply on BYP. Connect to the MOSFET source in the typical configuration.
FLTR 14 I A capacitor connected from FLTR to A filters the input to the fast comparator. Filtering allows the TPS2410 to ignore spurious transients on the A and C inputs. This pin may be left open to achieve the fastest response time.
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