ZHCSK65E November   2006  – October 2019 TPS2410 , TPS2411

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      典型应用图
  4. 4 修订历史记录
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
    1.     Pin Functions, PW
    2.     Pin Functions, RMS
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TPS2410, 11
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Device Pins
        1. 8.3.1.1  A, C:
        2. 8.3.1.2  BYP:
        3. 8.3.1.3  FLTR:
        4. 8.3.1.4  FLTB:
        5. 8.3.1.5  GATE:
        6. 8.3.1.6  GND:
        7. 8.3.1.7  RSET:
        8. 8.3.1.8  RSVD:
        9. 8.3.1.9  STAT
        10. 8.3.1.10 UV, OV, PG:
        11. 8.3.1.11 VDD:
      2. 8.3.2 Gate Drive, Charge Pump and C(BYP)
      3. 8.3.3 Fast Comparator Input Filtering – C(FLTR)
      4. 8.3.4 UV, OV, and PG
      5. 8.3.5 Input ORing and Stat
    4. 8.4 Device Functional Modes
      1. 8.4.1 TPS2410 vs TPS2411 – MOSFET Control Methods
  9. 9 Application and Implementation
    1. 9.1 Typical Connections
      1. 9.1.1 N+1 Power Supply
      2. 9.1.2 Input ORing
    2. 9.2 Typical Application Examples
      1. 9.2.1 VDD, BYP, and Powering Options
      2. 9.2.2 Bidirectional Blocking and Protection of C
      3. 9.2.3 ORing Examples
      4. 9.2.4 Design Requirements
        1. 9.2.4.1 MOSFET Selection and R(RSET)
        2. 9.2.4.2 TPS2410 Regulation-loop Stability
      5. 9.2.5 Detailed Design Procedure
      6. 9.2.6 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Recommended Operating Range
    2. 10.2 System Design and Behavior with Transients
  11. 11Layout
    1. 11.1 Layout Considerations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
    2. 12.2 相关链接
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)

7.5 Electrical Characteristics: TPS2410, 11(1)(2)(3)(4)(5)(6)(7)

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(A), V(C), VDD
VDD UVLO VDD rising 2.25 2.5 V
Hysteresis 0.25
A current | I(A) |, Gate in active range 0.66 1 mA
| I(A) |, Gate saturated high 0.1
C current | I(C) |, VAC  ≤ 0.1 V 10 μA
VDD current Worst case, gate in active range 4.25 6 mA
Gate saturated high 1.2
UV / OV / PG
UV threshold voltage V(UV) rising, V(OV) = 0 V, PG goes high 0.583 0.6 0.615 V
OV threshold voltage V(OV) rising, V(UV) = 1 V, PG goes low 0.583 0.6 0.615 V
Response time 50-mV overdrive 0.3 0.6 μs
Hysteresis V(UV) and V(OV) 7 mV
PG sink current V(UV) = 0 V, V(OV) = 0 V, V(PG) = 0.4 V 4 mA
UV / OV leakage current (source or sink) 1 μA
PG leakage current (source or sink) V(UV) = 1 V, V(OV) = 0 V, 0 ≤ V(PG)  ≤ 5 V 1 μA
FLTB
Sink current V(FLTB) = 0.4 V, V(GATE-)A = 0 V, V(A-C) = 0.1 V 4 mA
V(GATE-A) fault threshold V(A) = V(C) + 20 mV, V(GATE-A) falling until FLTB switches low 0.5 0.78 1 V
V(A-C) fault threshold V(A-C) = 0.1 V, increase V(A-C) until FLTB switches low 0.325 0.425 0.525 V
Deglitch on assertion 3.4 ms
Leakage current (source or sink) 1 μA
STAT
Sink current V(STAT) = 0.4 V, V(A) = V(C) + 0.1 V 4 mA
Input threshold VDD  ≥ 3 V VDD/2 V
Response time From fast turn-off initiation 50 ns
Source pull-up resistance 30 46 60 kΩ
FLTR
Filter resistance R(FLTR-C) 520 Ω
TURN ON
TPS2410 forward turn-on and regulation voltage 7 10 13 mV
TPS2410 forward turn-on / turn-off difference R(RSET) = open 7 mV
TPS2411 forward turn-on voltage 7 10 13 mV
TURN OFF
Fast turn-off threshold voltage GATE sinks > 10 mA at V(GATE-A) = 2 V mV
V(A-C) falling, R(RSET) = open 1 3 5
V(A-C) falling, R(RSET) = 28.7 kΩ -17 -13.25 -10
V(A-C) falling, R(RSET) = 3.24 kΩ -170 -142 -114
Additional threshold shift with STAT held low -157 mV
Turn-off delay V(A) = 12 V, V(A-C): 20 mV → -20 mV,
V(GATE-A) begins to decrease		 70 ns
Turn-off time V(A) = 12 V, C(GATE-GND) = 0.01 μF,
V(A-C) : 20 mV → -20 mV,
measure the period to V(GATE) = V(A) 		130 ns
GATE
Gate positive drive voltage, V(GATE-A) VDD = 3 V, V(A-C) = 20 mV 6 7 8 V
5 V ≤ VDD ≤ 18 V, V(A-C)= 20 mV 9 10.2 12.5
Gate source current V(A-C) = 50 mV, V(GATE-A) = 4 V 250 290 350 μA
Soft turn-off sink current (TPS2410) V(A-C) = 4 mV, V(GATE-A) = 2 V 2 5 mA
Fast turn-off pulsed current, I(GATE) V(A-C) = -0.1 V 1.75 2.35 A
V(GATE) = 8 V
V(GATE) = 5 V 1.25 1.75
Period 7.5 12.5 μs
Sustain turn-off current, I(GATE) V(A-C) = –0.1 V, V(C) = VDD, 3 ≤ VDD  ≤ 18 V,
2 V ≤ V(GATE)  ≤ 18 V		 15 19.5 mA
MISCELLANEOUS
Thermal shutdown temperature Temperature rising, TJ 135 °C
Thermal hysteresis 10 °C
(1) [3 V ≤ V(A) ≤ 18 V, V(C) = VDD] or [0.8 V ≤ V(A)  ≤ 3 V, 3 V ≤ VDD  ≤ 18 V]
(2) C(FLTR) = open, C(BYP) = 2200 pF, R(RSET) = open, STAT = open, FLT = open
(3) UV = 1 V, OV = GND
(4) –40°C ≤ TJ  ≤ 125°C
(5) Positive currents are into pins
(6) Typical values are at 25°C
(7) All voltages are with respect to GND.
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