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ZHCS033G January 2011 – November 2015 TPS24710 , TPS24711 , TPS24712 , TPS24713

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DGS|10
- MPDS035C

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, all voltages referred to GND (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Input voltage range	EN, FLT⁽²⁾⁽³⁾, FLTb⁽²⁾⁽⁴⁾, GATE, OUT, PG⁽²⁾⁽³⁾, PGb⁽²⁾⁽⁴⁾, SENSE, VCC	–0.3	30	V
	PROG⁽²⁾	–0.3	3.6
	SENSE to VCC	–0.3	0.3
	TIMER	–0.3	5
Sink current	FLT, PG, FLTb, PGb		5	mA
Source current	PROG	Internally limited		mA
Temperature	Maximum junction, T_J	Internally limited		°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Do not apply voltages directly to these pins.

(3) for TPS24712/13

(4) for TPS24710/11

7.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	All pins except PG and PGb	±2000	V
		Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	PG, PGb	±500	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾		±500	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Input voltage range	SENSE, VCC	2.5	18	V
Input voltage range	EN, FLT, FLTb, PG, PGb, OUT	0	18	V
Sink current	FLT, FLTb, PG, PGb	0	2	mA
Resistance	PROG	4.99	500	kΩ
External capacitance	TIMER	1		nF
Operating junction temperature range, T_J		–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS2471/x	UNIT
THERMAL METRIC⁽¹⁾		MSOP (10) PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	166.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	41.8
R_θJB	Junction-to-board thermal resistance	86.1
ψ_JT	Junction-to-top characterization parameter	1.5
ψ_JB	Junction-to-board characterization parameter	84.7
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

–40°C ≤ T_J ≤ 125°C, V_CC = 12 V, V_EN = 3 V, and R_PROG = 50 kΩ to GND.
All voltages referenced to GND, unless otherwise noted.

PARAMETER	CONDITIONS	MIN	NOM	MAX	UNIT
VCC
UVLO threshold, rising		2.2	2.32	2.45	V
UVLO threshold, falling		2.1	2.22	2.35	V
UVLO hysteresis⁽¹⁾			0.1		V
Supply current	Enabled ― I_OUT + I_VCC + I_SENSE		1	1.4	mA
Supply current	Disabled⁽¹⁾ ― EN = 0 V, I_OUT + I_VCC + I_SENSE		0.45		mA
EN
Threshold voltage, falling		1.2	1.3	1.4	V
Hysteresis⁽¹⁾			50		mV
Input leakage current	0 V ≤ V_EN ≤ 30 V	–1	0	1	µA
FLT, FLTb
Output low voltage	Sinking 2 mA		0.11	0.25	V
Input leakage current	V_FLT = 0 V, 30 V	–1	0	1	µA
Input leakage current	V_FLTb = 0 V, 30 V	–1	0	1	µA
PG, PGb
Threshold	V_{(SENSE – OUT)} rising, PG going low	140	240	340	mV
Threshold	V_{(SENSE – OUT)} rising, PGb going high	140	240	340	mV
Hysteresis⁽¹⁾	Measured V_{(SENSE – OUT)} falling, PG going high		70		mV
Hysteresis⁽¹⁾	Measured V_{(SENSE – OUT)} falling, PGb going low		70		mV
Output low voltage	Sinking 2 mA		0.11	0.25	V
Input leakage current	V_PG = 0 V, 30 V	–1	0	1	µA
Input leakage current	V_PGb = 0 V, 30 V	–1	0	1	µA
PROG
Bias voltage	Sourcing 10 µA	0.65	0.678	0.7	V
Input leakage current	V_PROG = 1.5 V	–0.2	0	0.2	µA
TIMER
Sourcing current	V_TIMER = 0 V	8	10	12	µA
Sinking current	V_TIMER = 2 V	8	10	12	µA
Sinking current	V_EN = 0 V, V_TIMER = 2 V	2	4.5	7	mA
Upper threshold voltage		1.30	1.35	1.40	V
Lower threshold voltage		0.33	0.35	0.37	V
Timer activation voltage	Raise GATE until I_TIMER sinking, measure V_{(GATE – VCC)}, V_CC = 12 V	5	5.9	7	V
Bleed-down resistance	V_ENSD = 0 V, V_TIMER = 2 V	70	104	130	kΩ
OUT
Input bias current	V_OUT = 12 V		16	30	µA
GATE
Output voltage	V_OUT = 12 V	23.5	25.8	28	V
Clamp voltage	Inject 10 µA into GATE, measure V_{(GATE – VCC)}	12	13.9	15.5	V
Sourcing current	V_GATE = 12 V	20	30	40	µA
Sinking current	Fast turnoff, V_GATE = 14 V	0.5	1	1.4	A
	Sustained, V_GATE = 4 V to 23 V	6	11	20	mA
	In inrush current limit, V_GATE = 4 V to 23 V	20	30	40	µA
Pulldown resistance	Thermal shutdown	14	20	26	kΩ
SENSE
Input bias current	V_SENSE = 12 V, sinking current		30	40	µA
Current limit threshold	V_OUT = 12 V	22.5	25	27.5	mV
Power limit threshold	V_OUT = 7 V, R_PROG = 50 kΩ	10.1	11.6	13.1	mV
Power limit threshold	V_OUT = 2 V, R_PROG = 25 kΩ	10.1	11.6	13.1	mV
Fast-trip threshold		52	60	68	mV
OTSD
Threshold, rising		130	140		°C
Hysteresis⁽¹⁾			10		°C

(1) Parameters are for reference only, and do not constitute part of TI’s published specifications for purposes of TI’s product warranty.

7.6 Timing Requirements

		MIN	NOM	MAX	UNIT
EN
Turnoff time	EN ↓ to V_GATE < 1 V, C_GATE = 33 nF	20	60	150	µs
Deglitch time	EN ↑	8	14	18	µs
Disable delay	EN ↓ to GATE ↓, C_GATE = 0, t_pff50–90, See Figure 1	0.1	0.4	1	µs
PG, PGb
Delay (deglitch) time	Rising or falling edge	2	3.4	6	ms
GATE
Fast-turnoff duration		8	13.5	18	µs
Turn on delay	V_CC rising to GATE sourcing, t_prr50-50, See Figure 2		100	250	µs
SENSE
Fast-turnoff duration		8	13.5	18	µs
Fast-turnoff delay⁽¹⁾	V_{(VCC – SENSE)} = 80 mV, C_GATE = 0 pF, t_prf50–50, See Figure 3		200		ns