SLVS503F November   2003  – February 2020 TPS2490 , TPS2491

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VCC
      2. 7.3.2  SENSE
      3. 7.3.3  GATE
      4. 7.3.4  OUT
      5. 7.3.5  EN
      6. 7.3.6  VREF
      7. 7.3.7  PROG
      8. 7.3.8  TIMER
      9. 7.3.9  PG
      10. 7.3.10 GND
    4. 7.4 Device Functional Modes
      1. 7.4.1 Board Plug-In ()
      2. 7.4.2 TIMER and PG Operation ()
      3. 7.4.3 Action of the Constant Power Engine ()
      4. 7.4.4 Response to a Hard Output Short ( and )
      5. 7.4.5 Automatic Restart ()
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Alternative Inrush Designs
        1. 8.1.1.1 Gate Capacitor (dV/dt) Control
        2. 8.1.1.2 PROG Inrush Control
      2. 8.1.2 Additional Design Considerations
        1. 8.1.2.1 Use of PG
        2. 8.1.2.2 Faults and Backplane Voltage Droop
        3. 8.1.2.3 Output Clamp Diode
        4. 8.1.2.4 Gate Clamp Diode
        5. 8.1.2.5 High Gate Capacitance Applications
        6. 8.1.2.6 Input Bypass
        7. 8.1.2.7 Output Short Circuit Measurements
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select RSNS and CL setting
        2. 8.2.2.2 Selecting the Hot Swap FET(s)
        3. 8.2.2.3 Select Power Limit
        4. 8.2.2.4 Set Fault Timer
        5. 8.2.2.5 Check MOSFET SOA
        6. 8.2.2.6 Set Under-Voltage Threshold
        7. 8.2.2.7 Choose R5, and CIN
        8. 8.2.2.8 Input and Output Protection
        9. 8.2.2.9 Final Schematic and Component Values
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 PC Board Guidelines
      2. 10.1.2 System Considerations
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DGS|10
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.1.1.1 Gate Capacitor (dV/dt) Control

The TPS249x can be used with applications that require constant turn-on currents. The current is controlled by a single capacitor from the GATE terminal to ground with a series resistor. Q1 appears to operate as a source follower (following the gate voltage) in this implementation. Choose a time to charge, Δt, based on the output capacitor, input voltage VI, and desired charge current, ICHARGE. Select ICHARGE to be less than PLIM ÷ VVCC if the power limit feature is kept. See TPS2490/91 Design-in Calculator (SLVC033) for a calculation tool.

Equation 4. TPS2490 TPS2491 Q11_LVS503.gif

To select the gate capacitance:

Equation 5. TPS2490 TPS2491 Q12_lvs503.gif

where

  • IGATE is the nominal gate charge current.

This equation assumes that the MOSFET CGD is the controlling element as the gate and output voltage rise. CGD is non-linear with applied VDG. An averaged estimate may be made using the MOSFET VGS vs QG curve. Divide the charge accumulated during the plateau region by the plateau VGS to get CRS.

Because neither power nor current-limit faults are invoked during turnon, CTIMER can be chosen for fast transient turnoff response using the Q1 SOA curve. Choose the single pulse time conservatively from the Q1 SOA curve using maximum operating voltage and maximum trip current. A series resistor of about 1 kΩ should be used in conjunction with CG.
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