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ZHCSC71E March 2014 – June 2021 TPS25200

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DRV|6
- MPDS216E

散热焊盘机械数据 (封装 | 引脚)

DRV|6
- QFND087M

订购信息

6.5 Electrical Characteristics

Conditions are –40°C ≤ T_J ≤ +125°C and 2.5 V ≤ V_IN ≤ 6.5 V. V_EN = V_IN, R_ILIM = 33 kΩ. Positive current into terminals. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted).

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	IN–OUT resistance⁽¹⁾	2.5 V ≤ V_IN ≤ 5 V, I_OUT = 2.5 A	T_J = 25°C		60	70	mΩ
			–40°C ≤ T_J ≤ +85°C		60	90
			–40°C ≤ T_J ≤ +125°C		60	99
ENABLE INPUT EN
	EN terminal turnon threshold	Input rising				1.9	V
	EN terminal turnoff threshold	Input falling		0.6			V
	Hyesteresis				330⁽²⁾		mV
I_EN	Leakage current	V_EN = 0 V or 5.5 V		–2		2	µA
DISCHARGE
R_DCHG	OUT discharge resistance	V_OUT = 5 V, V_EN = 0 V			480	625	Ω
CURRENT LIMIT
I_OS	Current - limit, See Figure 7-4	R_ILIM = 33 kΩ		2773	2952	3127	mA
		R_ILIM = 40.2 kΩ		2270	2423	2570
		R_ILIM = 56 kΩ		1620	1740	1860
		R_ILIM = 80.6 kΩ		1110	1206	1300
		R_ILIM = 150 kΩ		590	647	710
		R_ILIM = 1100 kΩ		40	83	130
OVERVOLTAGE LOCKOUT, IN
V_(OVLO)	IN rising OVLO threshold voltage	IN rising		6.8	7.6	8.45	V
	Hysteresis				70⁽²⁾		mV
VOLTAGE CLAMP, OUT
V_(OVC)	OUT clamp voltage threshold	C_L = 1 µF, R_L = 100 Ω, V_IN = 6.5 V		5.25	5.4	5.55	V
SUPPLY CURRENT
I_IN(off)	Supply current, low-level output	V_EN = 0 V, V_IN = 5 V			0.8	5	µA
I_IN(off)	Supply current, low-level output	V_EN = 0 or 5 V, V_IN = 20 V			1000	1700	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 33 kΩ		143	200	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 150 kΩ		134	190	µA
I_REV	Reverse leakage current	V_OUT = 6.5V, V_IN = V_EN = 0 V, T_J = 25°C, measure I_OUT			3	5	µA
UNDERVOLTAGE LOCKOUT, IN
V_UVLO	IN rising UVLO threshold voltage	IN rising			2.35	2.45	V
	Hysteresis				30⁽²⁾		mV
FAULT FLAG
V_OL	Output low voltage, FAULT	I_FAULT = 1 mA			50	180	mV
	Off-state leakage	V_FAULT = 6.5 V				1	µA
THERMAL SHUTDOWN
	Thermal shutdown threshold, OTSD2			155			°C
	Thermal shutdown threshold only in current-limit, OTSD1			135
	Hysteresis				20⁽²⁾

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.

(2) These parameters are provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.