Input and output capacitance improves the performance of the device; the actual capacitance must be optimized for the particular application. For all applications, a 0.1-µF or greater ceramic bypass capacitor between IN and GND is recommended as close to the device as possible for local noise decoupling.

When V_IN ramp up exceed 7.6 V, V_OUT follows V_IN until the TPS25200 turns off the internal MOSFET after t_{(OVLO_off_delay)}. Since t_{(OVLO_off_delay)} largely depends on the V_IN ramp rate, V_OUT sees some peak voltage. Increasing the output capacitance can lower the output peak voltage as shown in Figure 9-3.

Figure 9-3 V_OUT Peak Voltage vs C_OUT (V_IN Step From 5 V to 15 V with 1-V/µs Ramp Up Rate)