ZHCSHI4D January   2018  – December 2019 TPS25221

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化原理图
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Over-current Conditions
      2. 9.3.2 Fault Response
      3. 9.3.3 Undervoltage Lockout (UVLO)
      4. 9.3.4 Enable, (EN)
      5. 9.3.5 Thermal Sense
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Programming the Current-Limit Threshold
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Constant-Current
    2. 10.2 Typical Applications
      1. 10.2.1 Two-Level Current-Limit Circuit
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedures
          1. 10.2.1.2.1 Designing Above a Minimum Current Limit
          2. 10.2.1.2.2 Designing Below a Maximum Current Limit
          3. 10.2.1.2.3 Accounting for Resistor Tolerance
          4. 10.2.1.2.4 Input and Output Capacitance
        3. 10.2.1.3 Application Curve
      2. 10.2.2 Auto-Retry Functionality
        1. 10.2.2.1 Design Requirements (added)
        2. 10.2.2.2 Detailed Design Procedure
      3. 10.2.3 Typical Application as USB Power Switch
        1. 10.2.3.1 Design Requirements
          1. 10.2.3.1.1 USB Power-Distribution Requirements
        2. 10.2.3.2 Detailed Design Procedure
          1. 10.2.3.2.1 Universal Serial Bus (USB) Power-Distribution Requirements
  11. 11Power Supply Recommendations
    1. 11.1 Self-Powered and Bus-Powered Hubs
    2. 11.2 Low-Power Bus-Powered and High-Power Bus-Powered Functions
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Overview

The TPS25221 is current-limited, power-distribution switch using N-channel MOSFETs for applications where short circuits or heavy capacitive loads are encountered. The TPS25221 allows the user to program the current limit threshold between 275 mA to 2.7A (typical) through an external resistor.

This device incorporates an internal charge pump and the gate drive circuitry necessary to drive the N-channel MOSFET. The charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.5 V and requires little supply current. The driver controls the gate voltage of the power switch. The driver incorporates circuitry that controls the rise and fall times of the output voltage to limit large current and voltage surges and provides built-in soft-start functionality.

The TPS25221 limits the output current to the current-limit threshold IOS during an over-current or short-circuit event by reducing the charge pump voltage driving the N-channel MOSFET and operating it in the saturation region. The result of limiting the output current to IOS reduces the output voltage at OUT because N-channel MOSFET is no longer fully enhanced (see Figure 22).