米6体育平台手机版

ZHCSHG3B november 2017 – july 2020 TPS254900A-Q1

PRODUCTION DATA

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请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

RVC|20

散热焊盘机械数据 (封装 | 引脚)

RVC|20
- QFND186C

订购信息

6.7 Typical Characteristics

T_A = 25°C, V_(IN) = 5 V, V_(EN) = 5 V, V_(CTL1) = V_(CTL2) = 5 V, FAULT and STATUS connect to V_(IN) via a 10-kΩ pullup resistor (unless stated otherwise)

V_(IN) = 5 V

Figure 6-1 Power Switch On-Resistance vs Temperature

Figure 6-3 OUT Discharge Resistance (Mode Change) vs Temperature

V_(IN) = 5 V

Figure 6-5 OUT Short-Circuit Current Limit vs Temperature I

CTL1 = 1

CTL2 = 1

Figure 6-7 Disabled IN Supply Current vs Temperature

V_(IN) = 5 V

R_{(ILIM_LO)} = 80.6 kΩ

Figure 6-9 I_(OUT) Rising Load-Detect Threshold and OUT Short-Circuit Limit vs Temperature

V_(IN) = 5 V

Figure 6-11 OUT Overvoltage Protection Threshold vs Temperature

V_IN = 6.5 V

Figure 6-13 I_(CS) vs V_(CS) Voltage

V_IN = 4.5 V

Figure 6-15 I_(IMON) vs V_(CS) Voltage

V_(OUT) = 5 V

Measure I_(OUT)

Figure 6-2 Reverse Leakage Current vs Temperature

Figure 6-4 OUT Discharge Resistance (OVP) vs Temperature

V_(IN) = 5 V

Figure 6-6 OUT Short-Circuit Current Limit vs Temperature II

CTL1 = 1

CTL2 = 1

Figure 6-8 Enabled IN Supply Current – CDP (11) vs Temperature

V_(IN) = 5 V

Figure 6-10 DP_IN Overvoltage Protection Threshold vs Temperature

V_(IN) = 5 V

V_(CS) = 25 V

Figure 6-12 I_(CS) vs Temperature

V_IN = 5 V

V_(IMON) = 25 V

Figure 6-14 I_(IMON) vs Temperature

Measured on EVM with 10-cm cable

Figure 6-16 Bypassing the TPS254900A-Q1 Data Switch

R_(LOAD) = 5 Ω

C_(LOAD) = 10 µF

t = 2 ms/div

Figure 6-18 Turnon Response

R_{(ILIM_LO)} = 80.6 kΩ

t = 4 ms/div

Figure 6-20 Enable Into Short (SDP)

R_{(ILIM_LO)} = 80.6 kΩ

t = 2 ms/div

Figure 6-22 Short Circuit to No Load (SDP)

R_{(ILIM_HI)} = 19.1 kΩ

R(short) = 50 mΩ

t = 2 ms/div

Figure 6-24 Hot Short

R_{(ILIM_LO)} = 80.6 kΩ

t = 1 s/div

Figure 6-26 Load-Detection Reset Time

t = 100 ms/div

Figure 6-28 OUT Short-to-Battery Recovery

R_(BIAS) = 5.1 kΩ	t = 100 ms/div

Figure 6-30 DP_IN Short-to-Battery Recovery

R_(BIAS) = 5.1 kΩ	t = 200 ms/div

Figure 6-32 DP_IN Short-to-V_BUS and Recovery

Figure 6-34 Off-State Data-Switch Isolation vs Frequency

Measured on EVM with 10-cm cable

Figure 6-17 Through the TPS254900A-Q1 Data Switch

R_(LOAD) = 5 Ω

C_(LOAD) = 10 µF

t = 1 ms/div

Figure 6-19 Turnoff Response

R_{(ILIM_HI)} = 19.1 kΩ

t = 4 ms/div

Figure 6-21 Enable Into Short (CDP) – Thermal Cycling

R_{(ILIM_HI)} = 19.1 kΩ

t = 4 ms/div

Figure 6-23 Short Circuit to No Load (CDP)

R_{(ILIM_LO)} = 80.6 kΩ

t = 100 ms/div

Figure 6-25 Load-Detection Set Time

t = 4 ms/div

Figure 6-27 OUT Short to Battery

t = 4 ms/div

Figure 6-29 DP_IN Short to Battery

R_(BIAS) = 5.1 kΩ

t = 4 ms/div

Figure 6-31 DP_IN Short to V_BUS

Figure 6-33 Data Transmission Characteristics vs Frequency

Figure 6-35 On-State Cross-Channel Isolation vs Frequency