SLVS841F November   2008  – August 2016 TPS2552 , TPS2552-1 , TPS2553 , TPS2553-1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Overcurrent Conditions
      2. 9.3.2 Reverse-Voltage Protection
      3. 9.3.3 FAULT Response
      4. 9.3.4 Undervoltage Lockout (UVLO)
      5. 9.3.5 ENABLE (EN or EN)
      6. 9.3.6 Thermal Sense
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Programming the Current-Limit Threshold
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Constant-Current vs Latch-Off Operation and Impact on Output Voltage
    2. 10.2 Typical Applications
      1. 10.2.1 Two-Level Current-Limit Circuit
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedures
          1. 10.2.1.2.1 Designing Above a Minimum Current Limit
          2. 10.2.1.2.2 Designing Below a Maximum Current Limit
          3. 10.2.1.2.3 Accounting for Resistor Tolerance
          4. 10.2.1.2.4 Input and Output Capacitance
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Auto-Retry Functionality
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
      3. 10.2.3 Typical Application as USB Power Switch
        1. 10.2.3.1 Design Requirements
          1. 10.2.3.1.1 USB Power-Distribution Requirements
        2. 10.2.3.2 Detailed Design Procedure
          1. 10.2.3.2.1 Universal Serial Bus (USB) Power-Distribution Requirements
  11. 11Power Supply Recommendations
    1. 11.1 Self-Powered and Bus-Powered Hubs
    2. 11.2 Low-Power Bus-Powered and High-Power Bus-Powered Functions
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DBV|6
  • DRV|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
Voltage range on IN, OUT, EN or EN, ILIM, FAULT –0.3 7 V
Voltage range from IN to OUT –7 7 V
IO Continuous output current Internally Limited
Continuous total power dissipation See the Thermal Information
Continuous FAULT sink current 0 25 mA
ILIM source current 0 1 mA
TJ Maximum junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
IEC 61000-4-2 contact discharge(3) ±8000
IEC 61000-4-2 air-gap discharge(3) ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage, IN 2.5 6.5 V
VEN Enable voltage TPS2552/52-1 0 6.5 V
VEN Enable voltage TPS2553/53-1 0 6.5 V
VIH High-level input voltage on EN or EN 1.1 V
VIL Low-level input voltage on EN or EN 0.66
IOUT Continuous output current, OUT –40 °C ≤ TJ ≤ 125 °C 0 1.2 A
–40 °C ≤ TJ ≤ 105 °C 0 1.5
RILIM Current-limit threshold resistor range (nominal 1%) from ILIM to GND 15 232 kΩ
IO Continuous FAULT sink current 0 10 mA
Input de-coupling capacitance, IN to GND 0.1 µF
TJ Operating virtual junction temperature(1) IOUT ≤ 1.2 A –40 125 °C
IOUT ≤ 1.5 A –40 105
(1) See Power Dissipation and Junction Temperature for details on how to calculate maximum junction temperature for specific applications and packages.

7.4 Thermal Information

THERMAL METRIC(1) TPS2552 TPS2553 UNIT
DBV (SOT-23) DRV (WSON) DBV (SOT-23) DRV (WSON)
6 PINS 6 PINS 6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 182.6 72 182.6 72 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 122.2 85.3 122.2 85.3 °C/W
RθJB Junction-to-board thermal resistance 29.4 41.3 29.4 41.3 °C/W
ψJT Junction-to-top characterization parameter 20.8 1.7 20.8 1.7 °C/W
ψJB Junction-to-board characterization parameter 28.9 41.7 28.9 41.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — 11.1 — 11.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

over recommended operating conditions, VEN = 0 V, or VEN = VIN, RFAULT = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance DBV package, TJ = 25°C 85 95 mΩ
DBV package, –40°C ≤TJ ≤125°C 135
DRV package, TJ = 25°C 100 115
DRV package, –40°C ≤TJ ≤105°C 140
DRV package, –40°C ≤TJ ≤125°C 150
tr Rise time, output CL = 1 µF, RL = 100 Ω,
(see Figure 20)		 VIN = 6.5 V 1.1 1.5 ms
VIN = 2.5 V 0.7 1
tf Fall time, output CL = 1 µF, RL = 100 Ω,
(see Figure 20)		 VIN = 6.5 V 0.2 0.5
VIN = 2.5 V 0.2 0.5
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold 0.66 1.1 V
IEN Input current VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V –0.5 0.5 µA
ton Turnon time CL = 1 µF, RL = 100 Ω, (see Figure 20) 3 ms
toff Turnoff time CL = 1 µF, RL = 100 Ω, (see Figure 20) 3 ms
CURRENT LIMIT
IOS Current-limit threshold (Maximum DC output current IOUT delivered to load) and Short-circuit current, OUT connected to GND RILIM = 15 kΩ, –40°C ≤TJ ≤105°C 1610 1700 1800 mA
RILIM = 20 kΩ TJ = 25°C 1215 1295 1375
–40°C ≤TJ ≤125°C 1200 1295 1375
RILIM = 49.9 kΩ TJ = 25°C 490 520 550
–40°C ≤TJ ≤125°C 475 520 565
RILIM = 210 kΩ 110 130 150
ILIM shorted to IN 50 75 100
tIOS Response time to short circuit VIN = 5 V (see Figure 21) 2 µs
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
(VOUT – VIN)		 95 135 190 mV
Time from reverse-voltage condition to MOSFET turn off VIN = 5 V 3 5 7 ms
SUPPLY CURRENT
IIN_off Supply current, low-level output VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V 0.1 1 µA
IIN_on Supply current, high-level output VIN = 6.5 V, No load on OUT RILIM = 20 kΩ 120 140 µA
RILIM = 210 kΩ 100 120 µA
IREV Reverse leakage current VOUT = 6.5 V, VIN = 0 V TJ = 25 °C 0.01 1 µA
UNDERVOLTAGE LOCKOUT
UVLO Low-level input voltage, IN VIN rising 2.35 2.45 V
Hysteresis, IN TJ = 25 °C 25 mV
FAULT FLAG
VOL Output low voltage, FAULT I/FAULT = 1 mA 180 mV
Off-state leakage V/FAULT = 6.5 V 1 µA
FAULT deglitch FAULT assertion or de-assertion due to overcurrent condition 5 7.5 10 ms
FAULT assertion or de-assertion due to reverse-voltage condition 2 4 6 ms
THERMAL SHUTDOWN
Thermal shutdown threshold 155 °C
Thermal shutdown threshold in current-limit 135 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

7.6 Typical Characteristics

TPS2552 TPS2553 TPS2552-1 TPS2553-1 turnon_dly_lvs841.gif
Figure 1. Turnon Delay and Rise Time
TPS2552 TPS2553 TPS2552-1 TPS2553-1 ena_sht_cir_lvs841.gif
Figure 3. Device Enabled into Short-Circuit
TPS2552 TPS2553 TPS2552-1 TPS2553-1 full_ld_rec_lvs841.gif
Figure 5. Short-Circuit to Full-Load Recovery Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 no_load_rec_lvs841.gif
Figure 7. Short-Circuit to No-Load Recovery Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 trns_nl_1o_lvs841.gif
Figure 9. 1-Ω to No Load Transient Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 rev2_v_prot_lvs841.gif
Figure 11. Reverse-Voltage Protection Recovery
TPS2552 TPS2553 TPS2552-1 TPS2553-1 iin_tj_lvs841.gif
Figure 13. IIN – Supply Current, Output Disabled – µA
TPS2552 TPS2553 TPS2552-1 TPS2553-1 cl_pc_lvs841.gif
Figure 15. Current Limit Response – µs
TPS2552 TPS2553 TPS2552-1 TPS2553-1 ids_vds_lvs841.gif
Figure 17. Switch Current Vs. Drain-Source Voltage Across Switch
TPS2552 TPS2553 TPS2552-1 TPS2553-1 turnoff_dly_lvs841.gif
Figure 2. Turnoff Delay and Fall Time
TPS2552 TPS2553 TPS2552-1 TPS2553-1 full_ld_lvs841.gif
Figure 4. Full-Load to Short-Circuit Transient Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 no_load_lvs841.gif
Figure 6. No-Load to Short-Circuit Transient Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 no_load_1o_lvs841.gif
Figure 8. No Load to 1-Ω Transient Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 rev_v_prot_lvs841.gif
Figure 10. Reverse-Voltage Protection Response
TPS2552 TPS2553 TPS2552-1 TPS2553-1 uvlo_tj_lvs841.gif
Figure 12. UVLO – Undervoltage Lockout – V
TPS2552 TPS2553 TPS2552-1 TPS2553-1 iin2_tj_lvs841.gif
Figure 14. IIN – Supply Current, Output Enabled – µA
TPS2552 TPS2553 TPS2552-1 TPS2553-1 rdson_tj_lvs841.gif
Figure 16. MOSFET rDS(on) Vs. Junction Temperature
TPS2552 TPS2553 TPS2552-1 TPS2553-1 ids2_vds_lvs841.gif
Figure 18. Switch Current Vs. Drain-Source Voltage Across Switch
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