| PARAMETER | MIN | MAX | UNIT |
|---|
| Tstg | Storage temperature range | –65 | 150 | °C |
| V(ESD)(1) | Human-body model (HBM) ESD stress voltage(2) | –2 | 2 | kV |
| Charged-device model (CDM) ESD stress voltage(3) | –750 | 750 | V |
| System level(4) | Contact discharge | –8 | 8 | kV |
| Air discharge | –15 | 15 |
(1) Electrostatic discharge (ESD) to measure device sensitivity or immunity to damage caused by assembly-line electrostatic discharges into the device.
(2) The passing level per AEC-Q100 Classification H2.
(3) The passing level per AEC-Q100 Classification C5.
(4) Surges per EN61000-4-2, 1999 applied between USB connection for V
(BUS) and ground of the TPS2556EVM (HPA423, replacing TPS2556 with TPS2556-Q1) evaluation module (
SLUU393). These were the test levels, not the failure threshold.