SLVS931B November 2009 – December 2016 TPS2556 , TPS2557
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | IN, OUT, EN or EN, ILIM, and FAULT pins | –0.3 | 7 | V |
Voltage from IN to OUT | –7 | 7 | V | |
Continuous output current | Internally limited | |||
Continuous FAULT sink current | 25 | mA | ||
ILIM source current | Internally limited | |||
Continuous total power dissipation | See Thermal Information | |||
Maximum junction temperature | –40 | OTSD2 | °C | |
Storage temperature, Tstg | -65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
IEC 61000-4-2 contact discharge(3) | ±8000 | |||
IEC 61000-4-2 air discharge(3) | ±15000 |
THERMAL METRIC(1) | TPS255x | UNIT | |
---|---|---|---|
DRB (VSON) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 41.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 54.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 16.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 16.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
POWER SWITCH | |||||||
rDS(ON) | Static drain-source on-state resistance | TJ = 25°C | 22 | 25 | mΩ | ||
–40°C ≤TJ ≤ 125°C | 35 | ||||||
Enable pin turn on and off threshold | 0.66 | 1.1 | V | ||||
Enable input hysteresis(2) | 55 | mV | |||||
IEN | Input current | VEN = 0 V or 6.5 V, VEN = 0 V or 6.5 V | –0.5 | 0.5 | µA | ||
IOS | Current-limit threshold (Maximum DC output current IOUT delivered to load) and short-circuit current, OUT connected to GND | RILIM = 24.9 kΩ | 4130 | 4450 | 4695 | mA | |
RILIM = 61.9 kΩ | 1590 | 1785 | 1960 | ||||
RILIM = 100 kΩ | 935 | 1100 | 1260 | ||||
IIN_OFF | Supply current, low-level output | VIN = 6.5 V, No load on OUT, VEN = 6.5 V or VEN = 0 V | 0.1 | 2 | µA | ||
IIN_ON | Supply current, high-level output | VIN = 6.5 V, No load on OUT | RILIM = 24.9 kΩ | 95 | 120 | µA | |
RILIM = 100 kΩ | 85 | 110 | µA | ||||
IREV | Reverse leakage current | VOUT = 6.5 V, VIN = 0 V, TJ = 25 °C | 0.01 | 1 | µA | ||
UVLO | Low-level input voltage (IN pin) | VIN rising | 2.35 | 2.45 | V | ||
UVLO hysteresis (IN pin)(2) | 35 | mV | |||||
FAULT FLAG | |||||||
VOL | Output low voltage (FAULT pin) | IFAULT = 1 mA | 180 | mV | |||
Off-state leakage | VFAULT = 6.5 V | 1 | µA | ||||
FAULT deglitch | FAULT assertion or deassertion due to overcurrent condition | 6 | 9 | 13 | ms | ||
THERMAL SHUTDOWN | |||||||
OTSD2 | Thermal shutdown threshold | 155 | °C | ||||
OTSD | Thermal shutdown threshold in current-limit | 135 | °C | ||||
Hysteresis(2) | 20 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
tR | Rise time, output | CL = 1 µF, RL= 100 Ω, (see Figure 15) | VIN = 6.5 V | 2 | 3 | 4 | ms |
VIN = 2.5 V | 1 | 2 | 3 | ||||
tF | Fall time, output | CL = 1 µF, RL= 100 Ω, (see Figure 15) | VIN = 6.5 V | 0.6 | 0.8 | 1 | ms |
VIN = 2.5 V | 0.4 | 0.6 | 0.8 | ||||
tON | Turnon time | CL = 1 µF, RL= 100 Ω, (see Figure 15) | 9 | ms | |||
tOFF | Turnoff time | CL = 1 µF, RL= 100 Ω, (see Figure 15) | 6 | ms | |||
tIOS | Response time to short circuit(2) | VIN = 5 V (see Figure 16) | 3.5 | µs |