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ZHCSLT5C December 2009 – October 2020 TPS2560 , TPS2561

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DRC|10
- MPDS117L

散热焊盘机械数据 (封装 | 引脚)

DRC|10
- QFND013N

订购信息

7.6 Electrical Characteristics

over recommended operating conditions, V_/ENx = 0 V, or V_ENx = V_IN (unless otherwise noted)

PARAMETER		TEST CONDITIONS⁽¹⁾		MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	Static drain-source on-state resistance per channel, IN to OUTx	T_J = 25 °C			44	50	mΩ
r_DS(on)		–40 °C ≤ T_J ≤ 125 °C				70	mΩ
t_r	Rise time, output	C_Lx = 1 μF, R_Lx = 100 Ω (see Figure 8-1)	V_IN = 6.5 V	2	3	4	ms
t_r	Rise time, output	C_Lx = 1 μF, R_Lx = 100 Ω (see Figure 8-1)	V_IN = 2.5 V	1	2	3	ms
t_f	Fall time, output	C_Lx = 1 μF, R_Lx = 100 Ω (see Figure 8-1)	V_IN = 6.5 V	0.6	0.8	1.0	ms
t_f	Fall time, output	C_Lx = 1 μF, R_Lx = 100 Ω (see Figure 8-1)	V_IN = 2.5 V	0.4	0.6	0.8	ms
ENABLE INPUT, EN OR EN
	Enable pin turn on/off threshold			0.66		1.1	V
	Hysteresis				55⁽²⁾		mV
I_EN	Input current	V_ENx = 0 V or 6.5 V, V_/ENx = 0 V or 6.5 V		–0.5		0.5	μA
t_on	Turnon time	C_Lx = 1 μF, R_Lx = 100 Ω, (see Figure 8-1)				9	ms
t_off	Turnoff time	C_Lx = 1 μF, R_Lx = 100 Ω, (see Figure 8-1)				6	ms
CURRENT LIMIT
I_OS	Current-limit threshold per channel (Maximum DC output current I_OUTx delivered to load) and Short-circuit current, OUTx connected to GND	R_ILIM = 20 kΩ		2590	2800	3005	mA
		R_ILIM = 61.9 kΩ		800	900	1005
		R_ILIM = 100 kΩ		470	560	645
t_IOS	Response time to short circuit	V_IN = 5.0 V, (see Figure 8-2)			3.5⁽²⁾		μs
SUPPLY CURRENT
I_{IN_off}	Supply current, low-level output	V_IN = 6.5 V, no load on OUTx, V _ENx = 6.5 V or V_ENx = 0 V			0.1	2.0	μA
I_{IN_on}	Supply current, high-level output	V_IN = 6.5 V, no load on OUT	R_ILIM = 20 kΩ		100	125	μA
I_{IN_on}	Supply current, high-level output	V_IN = 6.5 V, no load on OUT	R_ILIM = 100 kΩ		85	110	μA
I_REV	Reverse leakage current	V_OUTx = 6.5 V, V_IN = 0 V	T_J = 25°C		0.01	1.0	μA
UNDERVOLTAGE LOCKOUT
UVLO	Low-level input voltage, IN	V_IN rising			2.35	2.45	V
	Hysteresis, IN	T_J = 25°C			35		mV
FAULTx FLAG
V_OL	Output low voltage, FAULTx	I_FAULTx = 1 mA				180	mV
	Off-state leakage	V_FAULTx = 6.5 V				1	μA
	FAULTx deglitch	FAULTx assertion or de-assertion due to overcurrent condition		6	9	13	ms
THERMAL SHUTDOWN
OTSD2	Thermal shutdown threshold			155			°C
OTSD	Thermal shutdown threshold in current-limit			135			°C
	Hysteresis				20⁽²⁾		°C

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

(2) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty.