ZHCSGV1C June   2017  – March 2018 TPS25740B

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 VBUS Capacitance
      2. 8.1.2 USB Data Communications
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  ENSRC
      2. 8.3.2  USB Type-C CC Logic (CC1, CC2)
      3. 8.3.3  USB PD BMC Transmission (CC1, CC2, VTX)
      4. 8.3.4  USB PD BMC Reception (CC1, CC2)
      5. 8.3.5  Discharging (DSCG, VPWR)
        1. 8.3.5.1 Discharging after a Fault (VPWR)
      6. 8.3.6  Configuring Voltage Capabilities (HIPWR)
      7. 8.3.7  Configuring Power Capabilities (PSEL, PCTRL, HIPWR)
      8. 8.3.8  Gate Driver (GDNG, GDNS)
      9. 8.3.9  Fault Monitoring and Protection
        1. 8.3.9.1 Over/Under Voltage (VBUS)
        2. 8.3.9.2 Over-Current Protection (ISNS, VBUS)
        3. 8.3.9.3 System Fault Input (GD, VPWR)
      10. 8.3.10 Voltage Control (CTL1, CTL2,CTL3)
      11. 8.3.11 Sink Attachment Indicator (DVDD)
      12. 8.3.12 Power Supplies (VAUX, VDD, VPWR, DVDD)
      13. 8.3.13 Grounds (AGND, GND)
      14. 8.3.14 Output Power Supply (DVDD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Sleep Mode
      2. 8.4.2 Checking VBUS at Start Up
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 System-Level ESD Protection
      2. 9.1.2 Using ENSRC to Enable the Power Supply upon Sink Attachment
      3. 9.1.3 Use of GD Internal Clamp
      4. 9.1.4 Resistor Divider on GD for Programmable Start Up
      5. 9.1.5 Selection of the CTL1, CTL2, and CTL3 Resistors (R(FBL1), R(FBL2), and R(FBL3))
      6. 9.1.6 Voltage Transition Requirements
      7. 9.1.7 VBUS Slew Control using GDNG C(SLEW)
      8. 9.1.8 Tuning OCP using RF and CF
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Application, A/C Power Source (Wall Adapter)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Power Pin Bypass Capacitors
          2. 9.2.1.2.2 Non-Configurable Components
          3. 9.2.1.2.3 Configurable Components
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Typical Application, D/C Power Source
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Power Pin Bypass Capacitors
          2. 9.2.2.2.2 Non-Configurable Components
          3. 9.2.2.2.3 Configurable Components
        3. 9.2.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 D/C Power Source (Power Hub)
      2. 9.3.2 A/C Power Source (Wall Adapter)
      3. 9.3.3 Dual-Port A/C Power Source (Wall Adaptor)
      4. 9.3.4 D/C Power Source (Power Hub with 3.3 V Rail)
  10. 10Power Supply Recommendations
    1. 10.1 VDD
    2. 10.2 VPWR
  11. 11Layout
    1. 11.1 Port Current Kelvin Sensing
    2. 11.2 Layout Guidelines
      1. 11.2.1 Power Pin Bypass Capacitors
      2. 11.2.2 Supporting Components
    3. 11.3 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
    2. 12.2 接收文档更新通知
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 术语表
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings(3)

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
IEC (4) 61000-4-2 contact discharge, CC1, CC2 ±8000
IEC (4) 61000-4-2 air-gap discharge, CC1, CC2 ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
(4) These results were passing limits that were obtained on an application-level test board. Individual results may vary based on implementation. Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and ground of TPS25740BEVM-741 and TPS25740BEVM-741
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |