ZHCSFH8D August   2016  – January 2018 TPS25741 , TPS25741A

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      DFP 主机端口中的简化实施方案
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 VBUS Capacitance
      2. 8.1.2 USB Data Communications
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  USB Type-C CC Logic (CC1, CC2)
      2. 8.3.2  9.3.2 VCONN Supply (VCONN, CC1, CC2)
      3. 8.3.3  USB Power Delivery BMC Transmission (CC1, CC2, VTX)
      4. 8.3.4  USB Power Delivery BMC Reception (CC1, CC2)
      5. 8.3.5  Discharging (DSCG, VPWR)
        1. 8.3.5.1 Discharging after a Fault (VPWR)
      6. 8.3.6  Configuring Voltage Capabilities (HIPWR, EN9V, EN12V)
      7. 8.3.7  Configuring Power Capabilities (PSEL, PCTRL, HIPWR)
      8. 8.3.8  Gate Drivers
        1. 8.3.8.1 GDNG, GDNS
        2. 8.3.8.2 G5V
        3. 8.3.8.3 GDPG
      9. 8.3.9  Fault Monitoring and Protection
        1. 8.3.9.1 Over/Under Voltage (VBUS)
        2. 8.3.9.2 Over-Current Protection (ISNS, VBUS)
        3. 8.3.9.3 System Fault Input (GD, VPWR)
      10. 8.3.10 Voltage Control (CTL1, CTL2)
      11. 8.3.11 Sink Attachment Indicator (UFP, DVDD)
      12. 8.3.12 Accessory Attachment Indicator (AUDIO, DEBUG)
      13. 8.3.13 Plug Polarity Indication (POL)
      14. 8.3.14 Power Supplies (VAUX, VDD, VPWR, DVDD)
      15. 8.3.15 Grounds (AGND, GND)
      16. 8.3.16 Output Power Supply (DVDD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Sleep Mode
      2. 8.4.2 Checking VBUS at Start Up
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 System-Level ESD Protection
      2. 9.1.2 Use of GD Internal Clamp
      3. 9.1.3 Resistor Divider on GD for Programmable Start Up
      4. 9.1.4 Selection of the CTL1 and CTL2 Resistors (RFBL1 and RFBL2)
      5. 9.1.5 Voltage Transition Requirements
      6. 9.1.6 VBUS Slew Control using GDNG CSLEW
      7. 9.1.7 Tuning OCP Using RF and CF
    2. 9.2 Typical Applications
      1. 9.2.1 A/C Multiplexing Power Source
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Power Pin Bypass Capacitors
          2. 9.2.1.2.2 Non-Configurable Components
          3. 9.2.1.2.3 Configurable Components
        3. 9.2.1.3 Application Curves
      2. 9.2.2 D/C Power Source
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Power Pin Bypass Capacitors
          2. 9.2.2.2.2 Non-Configurable Components
          3. 9.2.2.2.3 Configurable Components
        3. 9.2.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 A/C Power Source (Wall Adapter)
      2. 9.3.2 Dual-Port Power Managed A/C Power Source (Wall Adapter)
  10. 10Power Supply Recommendations
    1. 10.1 VDD
    2. 10.2 VCONN
    3. 10.3 VPWR
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Port Current Kelvin Sensing
      2. 11.1.2 Power Pin Bypass Capacitors
      3. 11.1.3 Supporting Components
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 Documentation Support
    2. 12.2 相关链接
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
IEC (3) 61000-4-2 contact discharge, CC1, CC2 ±8000
IEC (4) 61000-4-2 air-gap discharge, CC1, CC2 ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
(4) These results were passing limits that were obtained on an application-level test board. Individual results may vary based on implementation. Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and output ground of TPS25741EVM-802 and TPS25741AEVM-802
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