ZHCSNR4B May   2021  – April 2022 TPS25946

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
      1.      15
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO and UVP)
      2. 8.3.2 Overvoltage Lockout (OVLO)
      3. 8.3.3 Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 8.3.3.1 Slew Rate (dVdt) and Inrush Current Control
        2. 8.3.3.2 Active Current Limiting
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Load Current Monitor
      5. 8.3.5 Reverse Current Protection
      6. 8.3.6 Overtemperature Protection (OTP)
      7. 8.3.7 Fault Response and Indication (FLT)
      8. 8.3.8 Power Good Indication (PG)
      9. 8.3.9 Input Supply Good Indication (SPLYGD)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Single Device, Self-Controlled
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Device Selection
        2. 9.2.2.2 Setting Overvoltage Threshold
        3. 9.2.2.3 Setting Output Voltage Rise Time (tR)
        4. 9.2.2.4 Setting Power Good Assertion Threshold
        5. 9.2.2.5 Setting Overcurrent Threshold (ILIM)
        6. 9.2.2.6 Setting Overcurrent Blanking Interval (tITIMER)
        7. 9.2.2.7 Selecting External Bias Resistor (R5)
        8. 9.2.2.8 Selecting External Diode (D1)
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 Output Short-Circuit Measurements
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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8.3.5 Reverse Current Protection

The TPS25946xx has integrated back-to-back MOSFETs connected in a common drain configuration. When the device is in powered down or disabled state, both the FETs are turned OFF, thereby blocking the current flow in forward as well as reverse direction.
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